The role of Al atoms in resistive switching for Al/ZnO/Pt Resistive Random Access Memory (RRAM) device

1T MoS2/CoS2 heterostructures enabling enhanced resistive switching behavior in sodium alginate-based flexible memristors

“…In general, the FRRAM device with an Al electrode does not involve the ECM, but the VCM. 53 The Al/CoS 2 -SA/ITO/PET device exhibits BRS behavior (Fig. 5d–f), while the Al/1T MoS 2 -SA/ITO/PET device exhibits write once read many times (WORM) behavior (Fig.…”

A novel read circuit for RRAM based on RC delay effect

“…To evaluate the effectiveness of our proposed novel RRAM read circuit, we conducted extensive simulations using EDA tools. During the simulation, we employed a customized polynomial model of the RRAM [9]. This model accurately represents the resistive characteristics of real RRAM devices and exhibits a significant switching ratio.…”

Modulating the resistive switching stability of HfO2-based RRAM through Gd doping engineering: DFT+U

“…[18][19][20][21] Novel techniques have been adopted in order to enhance the RS characteristics of oxide-based RRAM, especially the performance stability, such as multilayer stacks, 22 altering the electrode material, 23 controlling the V O concentration, 24 interface engineering 25 and doping engineering. 26 One approach that is simple and makes a significant improvement in the distribution of V O and the performance parameters of the device is doping engineering. According to previous research, there are various elements added to oxide-based RRAM that could improve RS behaviors, such as Cu, 27 Al, 26 Ti, 28 etc., with trivalent elements being particularly prominent.…”

“…26 One approach that is simple and makes a significant improvement in the distribution of V O and the performance parameters of the device is doping engineering. According to previous research, there are various elements added to oxide-based RRAM that could improve RS behaviors, such as Cu, 27 Al, 26 Ti, 28 etc., with trivalent elements being particularly prominent. Gao et al 29 proposed a technique to improve the uniformity of oxide-based RRAM based on first-principles calculations.…”