The response of a microwave multipolar bucket plasma to a high voltage pulse

Qin, Shu; Chan, Chung; McGruer, N.E.; Browning, Jim; Warner, K.

doi:10.1109/27.125051

Cited by 30 publications

(14 citation statements)

References 15 publications

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“…The simulation of the implanted impurity profile began with a collisional dynamic model [5]- [7] to calculate the dose rate for PII. The model simulates the sheath thickness which must be known in order to calculate the ion energy distribution.…”

Section: Simulation Of Shallow Junction Formationmentioning

confidence: 99%

Hydrogen Etching Effects During Plasma Doping Processes and Impact on Shallow Junction Formation

1995

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Hydrogen etching effects in plasma ion implantation (PII) doping processes alter device structure and implant dopant profile and reduce the retained implant dose. This has particular relevance to the shallow junction devices of ultra large scale integrated circuits (ULSI). Hydrogen etching of semiconductor materials including Si, poly-Si, SiO 2 , Al, and photoresist films have been investigated. The effects of varying different P11 process parameters are presented. The experimental data show that the spontaneous etching by hydrogen radicals enhanced by ion bombardment is responsible for the etching phenomena. A computer simulation is used to predict the as-implanted impurity profile and the retained implant dose for a shallow junction doping when the etching effect is considered.

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Section: Simulation Of Shallow Junction Formationmentioning

confidence: 99%

Hydrogen Etching Effects During Plasma Doping Processes and Impact on Shallow Junction Formation

1995

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“…The collisionless dynamic sheath model [11 [2] for PIII can be expressed by a ChildLangmuir law and uncovering of the sheath edge during sheath expansion, so that 4 2qV3/2…”

Section: Basic Modelmentioning

confidence: 99%

“…The collisionless dynamic sheath model [11 [2] for PIII can be expressed by a ChildLangmuir law and uncovering of the sheath edge during sheath expansion, so that 4 2qV3/2 9 'IN (1) and ds(2 S= qn" -d (2) wherej is the ion current density, so is the free-space permittivity, q is the ion charge, M is the ion mass, V, is the absolute value of the pulse potential, n, is the ion density, and s is the sheath thickness. The sheath expansion versus the time s(t) can be obtained by solving the Eqs.…”

Section: Basic Modelmentioning

confidence: 99%

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Etching and Charging Effects on Dose in Plasma Immersion Ion Implantation

Shao¹,

Qin

Zhao

et al. 1994

MRS Proc.

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A general relation between the implanted dose and the processing time for plasma immersion ion implantation (PIll) can be established through the dynamic sheath model. In practice, etching and charging effects have to be taken into account in PHI dose estimation.Plasma immersion ion implantation (PIlI) has been tested in fabrication of semiconductor devices with shallow junctions and in hydrogenation of poly-Si thin film transistors (TFT). PHI doping is more suitable than conventional implantation for such applications because of its high dose rate at lower energy. Since the dose rate in PIH does not depend on the area being treated, the effective current will be higher if a larger implanted area is involved. However, the relation between dose and time is not always straightforward. During PHI processing possible etching and charging will affect the total accumulated doses. This paper presents a model for each which allows a proper compensation to be performed. BASIC MODELThe collisionless dynamic sheath model [11 [2] for PIII can be expressed by a ChildLangmuir law and uncovering of the sheath edge during sheath expansion, so that 4 2qV3/2 'IN(1) 111 Mat.

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“…In this article, the charging effects of hydrogen PIII are investigated with a dynamic sheath model [9][10][11][12][13][14][15] and PDP1 simulation code. 16,17 An analysis of the effects on implant energy, dose, impurity profile, and device reliability as functions of PIII process conditions and device structure is presented.…”

Section: Introductionmentioning

confidence: 99%

Charging effects in plasma immersion ion implantation for microelectronics

Qin¹

1995

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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The charging effects of plasma immersion ion implantation ͑PIII͒ doping experiments have been investigated using a dynamic sheath model and PDP1 plasma simulation code. When the target has a dielectric film, charge accumulation during PIII can have a profound impact on doping results. Under certain process conditions, it can significantly reduce implant energy and dose and thereby alter the implant profile. In addition, it may degrade device reliability, especially for ultralarge-scale integrated circuit devices. In order to minimize charging effects, shorter pulse widths along with moderate values of plasma density and pulse potential should be used.

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The response of a microwave multipolar bucket plasma to a high voltage pulse

Cited by 30 publications

References 15 publications

Hydrogen Etching Effects During Plasma Doping Processes and Impact on Shallow Junction Formation

Hydrogen Etching Effects During Plasma Doping Processes and Impact on Shallow Junction Formation

Etching and Charging Effects on Dose in Plasma Immersion Ion Implantation

Charging effects in plasma immersion ion implantation for microelectronics

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