2011
DOI: 10.1088/0960-1317/21/10/105025
|View full text |Cite
|
Sign up to set email alerts
|

The resonant III-nitride grating reflector

Abstract: We report here on the fabrication of a guided-mode resonant III-nitride grating reflector on a silicon substrate. In addition to compensating the residual stress of III-nitride layers, hafnium oxide (HfO2) film also serves as a hard mask during inductively coupled plasma reactive ion etching of III-nitride layers. The silicon substrate underneath the III-nitride gratings is etched and thus the III-nitride gratings are released and freely suspended with air as low refractive index materials on the top and botto… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1

Citation Types

0
5
0

Year Published

2013
2013
2020
2020

Publication Types

Select...
4
3

Relationship

1
6

Authors

Journals

citations
Cited by 7 publications
(5 citation statements)
references
References 24 publications
0
5
0
Order By: Relevance
“…There have been a few attempts, such as bandgap-selective photoelectrochemical etching of a sacrificial InGaN superlattice to form an AlGaN HCG membrane 74 however, with a limited airgap height, and focused-ion-beam etching to create an airgap underneath a GaNbased HCG 75 , an impractical process for device integration on a wafer-scale. In addition, GaN membrane gratings have been fabricated from a GaN-on-Si structure [76][77][78] by selective etching of Si, and free-standing hafnium-oxide gratings using the same approach 79 , but applying this concept to fabricate a bottom mirror in a VCSEL is not straightforward, since growth of high-quality GaN on Si for laser applications is very challenging. Due to the difficulties in realizing a III-nitride based HCG structure with an airgap, a grating reflector without an airgap could be used, which previously has been proposed for long-wavelength VCSELs where the mirror fabrication also is complex.…”
Section: Mirrorsmentioning
confidence: 99%
“…There have been a few attempts, such as bandgap-selective photoelectrochemical etching of a sacrificial InGaN superlattice to form an AlGaN HCG membrane 74 however, with a limited airgap height, and focused-ion-beam etching to create an airgap underneath a GaNbased HCG 75 , an impractical process for device integration on a wafer-scale. In addition, GaN membrane gratings have been fabricated from a GaN-on-Si structure [76][77][78] by selective etching of Si, and free-standing hafnium-oxide gratings using the same approach 79 , but applying this concept to fabricate a bottom mirror in a VCSEL is not straightforward, since growth of high-quality GaN on Si for laser applications is very challenging. Due to the difficulties in realizing a III-nitride based HCG structure with an airgap, a grating reflector without an airgap could be used, which previously has been proposed for long-wavelength VCSELs where the mirror fabrication also is complex.…”
Section: Mirrorsmentioning
confidence: 99%
“…There have been a few attempts, such as bandgap-selective photoelectrochemical etching of a sacrificial InGaN superlattice to form an AlGaN HCG membrane, 9 however, with a limited airgap height, and focused-ion-beam etching to create an airgap underneath a GaN-based HCG, 10 an impractical process for device integration on a wafer-scale. In addition, GaN membrane gratings have been fabricated from a GaN-on-Si structure by selective etching of Si, [11][12][13] but applying this concept to fabricate a bottom mirror in a VCSEL is not straightforward, since growth of high-quality GaN on Si for laser applications is very challenging. Due to the difficulties in realizing a III-nitride based HCG structure with an airgap, a GaN grating reflector without an airgap has been proposed.…”
Section: Introductionmentioning
confidence: 99%
“…Alternatively, an airgap underneath the GaN grating structure was fabricated by using a focused-ion-beam (FIB) etching process, 11 which is inconvenient for large-scale production despite its proof-of-principle approach. Moreover, in the GaN-on-Si platform, 12 an airgap was obtained by backside Si wafer etching, 13,14 by which the integration to VCSELs will remain difficult until the full epitaxial growth of nitrides on Si with high enough quality is feasible.…”
Section: Introductionmentioning
confidence: 99%