The Removal Mechanism of Monocrystalline Si in the Process of Double Diamond Abrasive Polishing by Molecular Dynamics Simulation

Dai, Houfu; Yue, Haixia; Hu, Yang; Li, Ping

doi:10.1007/s11249-021-01445-7

Cited by 15 publications

(6 citation statements)

References 32 publications

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“…Contact abrasives generate recoverable elastic indentations within the elastic limit. For brittle workpieces, such as silicon and carbide silicon, both brittle and ductile abrasion exist [22,23]. Sphere-shaped abrasives create nanoscale scratches by plastic deformation with lateral cracks (Figure 2); this is referred to as the mechanical material removal process in CMP [24].…”

Section: Mechanical Materials Removal By Plastic Deformationmentioning

confidence: 99%

“…Sphere-shaped abrasives create nanoscale scratches by plastic deformation with lateral cracks (Figure 2); this is referred to as the mechanical material removal process in CMP [24]. This microscratching or microcracking process by a high number of free abrasives is similar to a dynamic blunt indent on the workpiece [13,23]. The typical nanoscale scratch depth generated in this process is 0.1-1 nm for brittle materials such as silicon, which is 2-3 orders of magnitude smaller than the silica abrasive size.…”

Section: Mechanical Materials Removal By Plastic Deformationmentioning

confidence: 99%

“…where ν m , ν p , and ν l denote the Poisson ratios for the workpiece, polishing abrasive, and pad, respectively; E m , E p , and E l the Young's moduli, respectively; and E m−p and E l−p are the composite moduli for the workpiece-slurry and pad-slurry interfaces, respectively. Sphere-shaped abrasives produce the classical Hertzian cone crack as the silicon workpiece manifests ductile behaviors and produces plastic flow of material [23,25]. Based on the Hertzian contact theory, the radius a i of the contact circle is given by [14,15]…”

Section: Mechanical Materials Removal By Plastic Deformationmentioning

confidence: 99%

“…From the simple elastic load balance by the pad and workpiece over the abrasive, we obtained the gap value, contact radius, abrasive penetration depth, and plastic deformation depth corresponding to the experiment. This formulation is based on a ductile-regime polishing hypothesis proved by Bifano [23] to be capable of brittle materials such as silicon and silicon carbide, thereby is also adaptable to ductile materials such as fused silica and soda-lime glass.…”

Section: Mechanical Materials Removal By Plastic Deformationmentioning

confidence: 99%

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Surface Morphology Evolution during Chemical Mechanical Polishing Based on Microscale Material Removal Modeling for Monocrystalline Silicon

Xia

Siwen

et al. 2022

Materials

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Chemical–mechanical polishing (CMP) is widely adopted as a key bridge between fine rotation grinding and ion beam figuring in super-smooth monocrystalline silicon mirror manufacturing. However, controlling mid- to short-spatial-period errors during CMP is a challenge owing to the complex chemical–mechanical material removal process during surface morphology formation. In this study, the nature of chemical and mechanical material removal during CMP is theoretically studied based on a three-system elastic–plastic model and wet chemical etching behavior. The effect of the applied load, material properties, abrasive size distribution, and chemical reaction rate on the polishing surface morphology is evaluated. A microscale material removal model is established to numerically predict the silicon surface morphology and to explain the surface roughness evolution and the source of nanoscale intrinsic polishing scratches. The simulated surface morphology is consistent with the experimental results obtained by using the same polishing parameters tested by employing profilometry and atomic force microscopy. The PSD curve for both simulated surface and experimental results by profilometry and atomic force microscopy follows linear relation with double-logarithmic coordinates. This model can be used to adjust the polishing parameters for surface quality optimization, which facilitates CMP manufacturing.

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Section: Mechanical Materials Removal By Plastic Deformationmentioning

confidence: 99%

Section: Mechanical Materials Removal By Plastic Deformationmentioning

confidence: 99%

Section: Mechanical Materials Removal By Plastic Deformationmentioning

confidence: 99%

Section: Mechanical Materials Removal By Plastic Deformationmentioning

confidence: 99%

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Surface Morphology Evolution during Chemical Mechanical Polishing Based on Microscale Material Removal Modeling for Monocrystalline Silicon

Xia

Siwen

et al. 2022

Materials

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“…High-speed scratching experiments at the nanoscale cannot accurately control the machining depth and measure the high-frequency scratching force exerted by abrasives. Therefore, researchers have performed molecular dynamics (MD) simulations on double-and multiple-grits grinding to investigate grinding-induced damage accumulation and material removal [42][43][44][45][46][47][48]. Meng et al [42] used MD method to investigate the coupling between abrasives on material removal behavior during double-grits grinding of 6H-SiC crystals.…”

Section: Introductionmentioning

confidence: 99%

Damage evolution and removal behaviors of GaN crystals involved in double-grits grinding

Li,

Hu,

Wei

et al. 2024

Int. J. Extrem. Manuf.

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Understanding the complex interactions between the work material and abrasives is a difficult and hot topic during grinding of Gallium nitride (GaN) single crystals. In this work, molecular dynamics (MD) simulations of double-grits interacted grinding of GaN crystals were performed, and the grinding force, coefficient of friction, stress distribution, plastic damage behaviors, and abrasive damage were systematically investigated. The results demonstrated that interacted distance with both radial and transverse directions achieved better grinding quality than that with only one direction or single-grit grinding. The grinding force, grinding induced stress, subsurface damage depth, and abrasive wear increases as the transverse interacted distance increases. However, the influence laws of the interacted distance on atom number of phase transition and dislocation length are not distinct. Appropriate interacted distances between abrasives can decrease grinding force, coefficient of friction, grinding induced stress, subsurface damage depth, and abrasive wear during the grinding process. Grinding test combined with the cross-sectional TEM detection verified the reliability of the simulated damage behaviors, i.e. amorphous, high-pressure phase transition, dislocations, stacking faults, and lattice distortions. The results not only enhance the understanding of damage accumulation and material removal caused by the coupling actions of abrasives in grinding process, but also provide a feasible approach for the wheel design of ordered abrasives.

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Molecular dynamics simulation-based study of single-crystal 3C-SiC nano-indentation with water film

Ou,

Wu,

Dai

2023

Appl. Phys. A

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The Removal Mechanism of Monocrystalline Si in the Process of Double Diamond Abrasive Polishing by Molecular Dynamics Simulation

Cited by 15 publications

References 32 publications

Surface Morphology Evolution during Chemical Mechanical Polishing Based on Microscale Material Removal Modeling for Monocrystalline Silicon

Surface Morphology Evolution during Chemical Mechanical Polishing Based on Microscale Material Removal Modeling for Monocrystalline Silicon

Damage evolution and removal behaviors of GaN crystals involved in double-grits grinding

Molecular dynamics simulation-based study of single-crystal 3C-SiC nano-indentation with water film

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