2019
DOI: 10.1016/j.eml.2019.02.003
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The relaxed structure of intrinsic dislocation networks in semicoherent interfaces: predictions from anisotropic elasticity theory and comparison with atomistic simulations

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Cited by 6 publications
(1 citation statement)
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“…It is worth mentioning that after multiple annealing stages, the flat morphology of GBs change to a curved one, producing microstructures similar to those of reported in the experimental studies 55 . Such an annealing protocol minimizes dislocation core energies of misfit dislocations located at the interfacial region 56 . During all annealing stages, the isothermal-isobaric barostat (NPT) was employed to ensure zero pressure in all three directions and a lack of residual thermal stress within the samples.…”
Section: Methodology and Simulation Detailsmentioning
confidence: 99%
“…It is worth mentioning that after multiple annealing stages, the flat morphology of GBs change to a curved one, producing microstructures similar to those of reported in the experimental studies 55 . Such an annealing protocol minimizes dislocation core energies of misfit dislocations located at the interfacial region 56 . During all annealing stages, the isothermal-isobaric barostat (NPT) was employed to ensure zero pressure in all three directions and a lack of residual thermal stress within the samples.…”
Section: Methodology and Simulation Detailsmentioning
confidence: 99%