The relaxation of the neutral state of manganese in gallium arsenide

About anomalous g factor value of Mn-related defects in GaAs:Mn

“…Together with the well-known spectra with g = 2.0023, A = 54 x 10 -4 cm -1 , and a = 13 x 10 -4 cm -1 ("A" and "a" is a constant superfine, fine interactions accordingly ) of GaAs : Mn ESR samples [11,24], which are associated with [Mn } number of other spectral features are observed, whose nature is still under discussion. Here, we will discuss defects responsible for the appearance of ESR lines with g factors 2.81 and 5.62 (see also [13] for results of studies in GaAs : Mn samples at temperatures below 10 K).…”

“…Here, we will discuss defects responsible for the appearance of ESR lines with g factors 2.81 and 5.62 (see also [13] for results of studies in GaAs : Mn samples at temperatures below 10 K). Most researchers who have studied such defects [11,12] relate the observed signals to permitted (ΔJ z = 1) and forbidden (ΔJ z = 2) magnetic dipole transitions in the multiplet with J = 1. (Here and below J z , J x , J y , is the projections of the total angular momentum J.)…”

“…Thus, there is no need to make additional assumptions about the strength and sign of the exchange interaction between the 3d core and the band electrons (see, for example, [12,14] The multiplet with J = 1 is the ground state of the paring defect [Mn …”

“…g-factor for the defect Mn In the same time, the structure of the wave function of the one-electron states that are filled during recharge of the such defect remains unknown. In other words, it is not known whether recharge processes involving the Mn s defect are accompanied by changes in the degree of filling of the 3d shell of the impurity ion (an impurity-like state) or if they predominantly redistribute the electron density of the bands (a vacancy-like state) .There are accordingly two models for the Mn 0 s defect in the literature: "3d 5 +h + v " [12,14] and "3d 4 " [21]. Small hybridization between impurity and band states is a basic postulate of the "3d 5 +h + v " model , but vice versa for the"3d 4 " one .…”

“…Studies of the electronic structure of defects arising in gallium arsenide doped by manganese have continued for more than fifty years [8][9][10][11][12][13][14][15][16][17][18][19]. It is necessary to note works seeking to investigating of a time depended processes in the system, separately [18,19].…”