The relationship between the spatially resolved field emission characteristics and the raman spectra of a nanocrystalline diamond cold cathode

Talin, A. Alec; Pan, Lei; McCarty, K. F.; Felter, T. E.; Doerr, H.J.; Bunshah, R.F.

doi:10.1063/1.117123

Cited by 144 publications

(37 citation statements)

References 2 publications

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“…[1][2][3][4] Initial interest was stimulated by the prospect of electron emission at very low electric fields due to the low electron affinity of the carbon in the diamond form when terminated with hydrogen: the diamond surface, in fact, has a negative electron affinity ͑NEA͒. Various carbon based cold cathodes including diamond, 5 nanodiamond, 6 diamondlike carbon ͑DLC͒ and tetrahedral amorphous carbon, 7,8 carbon nanotubes, 9,10 and nanoclustered carbon [11][12][13][14] have all been shown to emit electrons at reasonably low electric fields. The ease of emission from widely different carbon materials suggests that NEA is not a prerequisite and may be a bonus feature.…”

Section: Introductionmentioning

confidence: 99%

Field emission from as grown and nitrogen incorporated tetrahedral amorphous carbon/silicon heterojunctions grown using a pulsed filtered cathodic vacuum arc technique

Panwar

Rupesinghe

Amaratunga

2008

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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This article reports the field emission measurements on as grown tetrahedral amorphous carbon ͑ta-C͒ and nitrogen incorporated tetrahedral amorphous carbon ͑ta-C: N͒ films grown using a pulsed filtered cathodic vacuum arc technique. The effect of varying thickness on field emission in the as grown ta-C films and the effect of varying nitrogen content in ta-C: N films have also been studied. The values of threshold field of emission ͑E turn on ͒ increase with decrease of thickness in the as grown ta-C films. Nitrogen incorporation up to 5.2 at. % in ta-C films decreases the value of E turn on from 9.9 to 5.1 V / m and thereafter it starts increasing again. To understand the mechanism of electron emission, a realistic energy band diagram of ta-C : N / n ++ Si heterojunction has been proposed from the experimentally measured valence and conduction band offsets, using in situ x-ray photoelectron spectroscopy and optical spectroscopy data already published in DRM 9 ͑2000͒ 1148. The data are explained using the Fowler and Nordheim theory. The field emission results obtained reveal that there exists a barrier to emission and the main barrier is at the front surface and this is related to the conduction band offset of the ta-C : N / n ++ Si heterojunction.

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Section: Introductionmentioning

confidence: 99%

Field emission from as grown and nitrogen incorporated tetrahedral amorphous carbon/silicon heterojunctions grown using a pulsed filtered cathodic vacuum arc technique

Panwar

Rupesinghe

Amaratunga

2008

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…1 NCD films with high field-emission (FE) efficacy have been produced using various deposition processes. [2][3][4][5] Composition and bonding structure both influence FE efficacy of an NCD film. NCD films are composed of diamond crystallites and sp 2 -bonded nondiamond carbon.…”

Section: Introductionmentioning

confidence: 99%

“…1 A microscopic analysis of the FE of NCD films revealed that electrons were ejected from defective diamond crystallites with disordered sp 2 carbon rather than from the perfect diamond or graphite phase. 2 The ratio of the intensity of the D-band around 1350 cm À1 to that of the G-band around 1550 cm À1 (I D /I G ) in the Raman spectra has been adopted to describe the macroscopic bonding structure of diamond films, 6,7 and has been correlated with the FE properties of such films. 4 High-efficiency electron emission has been observed from the NCD films with high I D /I G ratio.…”

Section: Introductionmentioning

confidence: 99%

Field Emission and Electric Discharge of Nanocrystalline Diamond Films

Huang

Jou

2009

Journal of Elec Materi

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Nanocrystalline diamond (NCD) films were produced by microwave plasmaenhanced chemical vapor deposition (MPECVD) using gas mixtures of Ar, H 2 , and CH 4 . The structural properties, electron emission, and electric discharge behaviors of the NCD films varied with H 2 flow rates during MPECVD. The turn-on field for electron emission at a pressure of 2.66 9 10 À4 Pa increased from 4.2 V lm À1 for the NCD films that were deposited using a H 2 flow rate of 10 cm 3 min À1 to 7 V lm À1 for films deposited at a H 2 flow rate of 20 cm 3 min À1 . The NCD film with a low turn-on field also induced low breakdown voltages in N 2 . The grain size and roughness of the NCD films may influence both the electron emission and the electric discharge behaviors of the NCD cathodes.

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“…Effective field electron emission was observed for different types of carbon objects including chemical vapor deposition CVD diamond films [1,2], diamond-like carbon films [3], nanotubes and graphene films, etc. [4,5].…”

Section: Introductionmentioning

confidence: 99%

The growth process and field emission characteristics of spherical aggregates of polycrystalline diamond flakes

Zhang

et al. 2011

Phys. Status Solidi C

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The spherical aggregates films of polycrystalline diamond flakes were deposited on titanium coated Si substrates by microwave plasma chemical vapor deposition (MPCVD). The microstructure and surface morphology of deposited films were characterized by Raman spectroscope and scanning electron microscope. The field electron emission current‐voltage curve was measured by diode structure in a vacuum of below 5×10‐5Pa. It was found that the field emission property of the samples depended on the microstructure of the aggregates films obviously. A stable turn‐on field of 2.17 V/μm and the current density of 2.04 mA/cm2 at the electric field of 3.42 V/μm were obtained for the spherical aggregates film of polycrystalline diamond flakes, which grew under the process with the ratio of CH4 and H2 source gas of 12/100 sccm. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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The relationship between the spatially resolved field emission characteristics and the raman spectra of a nanocrystalline diamond cold cathode

Cited by 144 publications

References 2 publications

Field emission from as grown and nitrogen incorporated tetrahedral amorphous carbon/silicon heterojunctions grown using a pulsed filtered cathodic vacuum arc technique

Field emission from as grown and nitrogen incorporated tetrahedral amorphous carbon/silicon heterojunctions grown using a pulsed filtered cathodic vacuum arc technique

Field Emission and Electric Discharge of Nanocrystalline Diamond Films

The growth process and field emission characteristics of spherical aggregates of polycrystalline diamond flakes

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