The relationship between refractive index-energy gap and the film thickness effect on the characteristic parameters of CdSe thin films

Akaltun, Yunus; Yıldırım, Muhammet; Ateş, Aytunç

doi:10.1016/j.optcom.2010.12.094

Cited by 135 publications

(48 citation statements)

References 22 publications

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“…The grain size of the thin films was calculated by XRD patterns using Debye Scherrer's formula [12], where D is the grain size, λ is the X-ray wavelength used, β is the angular line width at half-maximum intensity in radians and θ is Bragg's angle. The grain size and dislocation density of the films were calculated using the FWHM of (103) and (020) peaks obtained through the Scherrer's method.…”

Section: Resultsmentioning

confidence: 99%

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Synthesis and characterization of CrSe thin film produced via chemical bath deposition

Kariper

2017

Opt Rev

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are rarely produced. However, CrSe alloy is a very interesting material because of its magnetic properties [1]. The chromium selenide analogue Cr (1 − x) Se (x) is well known as antiferromagnetic [2]. The metallic chromium selenides as Cr 3 Se 4 and Cr 2 Se 3 are antiferromagnets and semiconductors [3][4][5]. Some transition metal chalcogenides are found to be excellent candidates for half-metallic ferromagnets according to literature [6].It is already known that chromium selenide has a monoclinic structure, located at I2/m space group, and crystallizes as Cr 2 Se 3 and Cr 7 Se 8 , Cr 3 Se 4 [5]. The structure of chromium selenides is similar to NiAs and both of them have vacancies in their second metal-atom layer. The researchers found that if the structure is rich in Cr, the material shows antiferromagnetic behavior, whereas metaor ferromagnetic order was observed in Cr-poor samples [5][6][7][8][9][10][11]. It is very important to produce such material which possesses so many features.The aim of this paper is to produce CrSe thin film using a new method of chemical bath deposition and to examine its structure and optical properties. It is argued that crystal structure and optical properties of CrSe could be controlled by the pH of chemical bath. It is clear that producing CrSe thin films via chemical bath deposition is much more advantageous to the researchers since it is a simple and cheap method to fabricate. Since the production of CrSe via chemical bath deposition, which is a simple and cheap method, is quite difficult, the most appropriate reagents should be selected. Also, this is a new method for producing CrSe thin films. According to the literature mentioned above, CrSe alloys usually result in amorphous structure, thus it is quite difficult to produce crystalline form.Abstract Chromium selenide (CrSe) crystalline thin film has been produced via chemical bath deposition on substrates (commercial glass). Transmittance, absorption, optical band gap and refractive index of the films have been examined by UV/VIS. Spectrum. Structural properties have been examined and XRD hexagonal form has been observed. The structural and optical properties of CrSe thin films, produced at different pH levels were analyzed; SEM and EDX analysis have been performed for surface analysis and elemental ratio of the films. It has been found that some properties of the films have been changed with pH and the changes of these properties with respect to pH have been investigated. Tested pH values were between 8 and 11. The optical band gap has been varied between 3.80 and 3.92 eV and film thickness has been changed from 76 nm to 126 nm for tested pH levels. Absorbance values were found to be 0.053, 0.018, 0.012 and 0.069 for pH values of 11, 10, 9 and 8, respectively (550 nm wavelength). The refractive index of CrSe thin films have been changed with film thickness, found as 2.27, 2.24, 2.25 and 2.26.

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Section: Resultsmentioning

confidence: 99%

“…The grain size and dislocation density of the films were calculated using the FWHM of (103) and (020) peaks obtained through the Scherrer's method. The dislocation density (δ), which is calculated by the formulas below, gives more information about the amount of defects in the films [12].…”

Section: Resultsmentioning

confidence: 99%

Synthesis and characterization of CrSe thin film produced via chemical bath deposition

Kariper

2017

Opt Rev

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“…They found that the grain size is inversely proportional to the optical band gap and that the film thickness affects the optical band gap. Quantum size effect on the optical band gap was discussed in the literature [26][27][28][29][30]. The effect of structure on the optical band gap results from the fact that the number of grains per unit cell and the number of spaces per unit cell affect the density of the unit cell (in the present work molecular weight = 461.96 g/mol, density = 8.449 g/cm 3 ).…”

Section: Optical and Dielectric Propertiesmentioning

confidence: 92%

“…Once absorption coefficient is determined, the value of optical band gap can be found. The value of optical band gap energy has been established from the absorption spectra of the films by using the following formula [26][27][28][29]:…”

Section: Optical and Dielectric Propertiesmentioning

confidence: 99%

Synthesis, surface tension, optical and dielectric properties of bismuth oxide thin film

Tezel

Kariper

2017

Materials Science-Poland

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Bismuth oxide thin film was deposited by chemical bath deposition (CBD) technique onto a glass substrate. The grain size (D), dislocation density (δ) and number of crystallites per unit area (N), i.e. structural properties of the thin film were determined as 16 nm, 39.06 × 10 −4 line/nm 2 , 31.25 × 10 −3 1/nm 2 , respectively. Optical transmittance properties of the thin film were investigated by using a UV-Vis spectrophotometer. The optical band gap (E g ) for direct transitions, optical transmission (T %), reflectivity (R %), absorption, refractive index (n r ), extinction coefficient (k), dielectric constant ( ) of the thin film were found to be 3.77 eV, 25.23 %, 32.25 %, 0.59, 3.62, 0.04 and 2.80, respectively. The thickness of the film was measured by AFM, and was found to be 128 nm. Contact angles of various liquids on the oxide thin film were determined by Zisman method, and surface tension was calculated to be 31.95 mN/m.

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“…This can be attributed to improvement in the crystals, in morphological changes of the films, in changes of atomic distances and grain size and structural defects in the films [32].…”

Section: Fig 1 Variations Of Transmittance T With Wavelength λ For mentioning

confidence: 99%

Effect of preparation condition on the optical properties of transparent conducting oxide based on zinc oxide

El-Raheem¹,

Al-Ofi²,

Alhuthali³

et al. 2015

Optics

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Thin films of Al 2 ZnO 4 were prepared using DC sputtering technique at room temperature. One set of the films of different thicknesses were prepared under the same condition of preparation, another one was prepared under different rate of flow of argon, the last set was prepared under different pressure of the gas. The optical energy gap, Urbach tails, refractive index of the films, single oscillator energy and dispersion energy were studied. The effect of changing the condition of preparation on the optical constants was investigated.

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The relationship between refractive index-energy gap and the film thickness effect on the characteristic parameters of CdSe thin films

Cited by 135 publications

References 22 publications

Synthesis and characterization of CrSe thin film produced via chemical bath deposition

Synthesis and characterization of CrSe thin film produced via chemical bath deposition

Synthesis, surface tension, optical and dielectric properties of bismuth oxide thin film

Effect of preparation condition on the optical properties of transparent conducting oxide based on zinc oxide

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