The Relationship between Activation Parameters and Dislocation Glide in 4H-SiC Single Crystals

Glide and multiplication of basal plane dislocations during 4H-SiC homoepitaxy

“…At 1300°C the CRSS was 4 MPa. 20 By extrapolating the experimental dependence to 1600°C ͑Fig. 2 in Ref.…”

Dislocation glide-controlled room-temperature plasticity in 6H-SiC single crystals

“…The third possible basal slip is on the glide set along h1 1 0 0i that involves dissociation of the dislocation into two partials along 1/3½1 1 0 0 + 1/ 3½1 0 1 0 separated by a stable stacking fault. This slip mechanism is considered to be active at high temperatures [35,36]. Although E GSF is the lowest for this process, shown by the dotted curve in Fig.…”

Origin of basal plane bending in hexagonal silicon carbide single crystals

“…The magnitude of the shear stress was calculated to exceed the CRSS at typical growth temperatures. Samant et al [30,32] experimentally estimated the CRSS of hexagonal SiC from compression tests conducted up to 1300 1C. The CRSS decreased gradually as the temperature increased and at the growth temperatures over 2200 1C the CRSS is estimated to be less than 1 MPa.…”

“…It is well known that the activation of the (a/3)h1 12 0i{0 0 0 1} basal plane slip system is the primary mode of plastic deformation in hexagonal SiC crystals at temperatures above 400 1C [25][26][27][28][29][30][31][32]. Even in the geometry where the resolved shear stress in other slip systems is maximized, the deformation by the basal plane slip is generally favored [26,27,33].…”

“…Even in the geometry where the resolved shear stress in other slip systems is maximized, the deformation by the basal plane slip is generally favored [26,27,33]. In the orientation favorable for the activation of the primary slip system, hexagonal SiC can be plastically deformed to a relatively large strain at temperatures as low as 550 1C [31,32,34].…”