The recognition problem with time constraints

Koltsov, P. P.

doi:10.1016/0041-5553(74)90206-7

Cited by 4 publications

(1 citation statement)

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“…61 A dedicated review article has been written on its reaction mechanisms 62 and the reaction mechanisms is further discussed in our recent publications. 53,63 The TiCl4/H2O has been known over 45 years, and it may even be the oldest ALD process known 64,65 and the second-most widely used ALD process. 61 A dedicated review has been written about the reaction mechanisms and "agglomeration phenomenon" in this process, taking place beyond 300 °C.…”

Section: A Short Literature Reviewmentioning

confidence: 99%

Aluminum oxide/titanium dioxide nanolaminates grown by atomic layer deposition: Growth and mechanical properties

Ylivaara¹,

Kilpi²,

Liu

et al. 2016

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Atomic layer deposition (ALD) is based on self-limiting surface reactions. This and cyclic process enable the growth of conformal thin films with precise thickness control and sharp interfaces. A multilayered thin film, which is nanolaminate, can be grown using ALD with tuneable electrical and optical properties to be exploited, for example, in the microelectromechanical systems. In this work, the tunability of the residual stress, adhesion, and mechanical properties of the ALD nanolaminates composed of aluminum oxide (Al2O3) and titanium dioxide (TiO2) films on silicon were explored as a function of growth temperature (110–300 °C), film thickness (20–300 nm), bilayer thickness (0.1–100 nm), and TiO2 content (0%–100%). Al2O3 was grown from Me3Al and H2O, and TiO2 from TiCl4 and H2O. According to wafer curvature measurements, Al2O3/TiO2 nanolaminates were under tensile stress; bilayer thickness and growth temperature were the major parameters affecting the stress; the residual stress decreased with increasing bilayer thickness and ALD temperature. Hardness increased with increasing ALD temperature and decreased with increasing TiO2 fraction. Contact modulus remained approximately stable. The adhesion of the nanolaminate film was good on silicon.

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