The range and intensity of backscattered electrons for use in the creation of high fidelity electron beam lithography patterns

Czaplewski, David A.; Holt, Martin V.; Ocola, Leonidas E.

doi:10.1088/0957-4484/24/30/305302

Cited by 10 publications

(3 citation statements)

References 30 publications

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“…This is especially true for high atomic number substrates such as GaAs (Z=32), where the backscattering intensity is ~ 40% higher that on Si 25 . The process we have developed is both high resolution and low contrast, enabling us to achieve uniform honeycomb lattices with periods smaller than 50 nm.…”

Section: Resultsmentioning

confidence: 99%

Fabrication of artificial graphene in a GaAs quantum heterostructure

Scarabelli¹,

Wang²,

Pinczuk³

et al. 2015

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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The unusual electronic properties of graphene, which are a direct consequence of its twodimensional (2D) honeycomb lattice, have attracted a great deal of attention in recent years. Creation of artificial lattices that recreate graphene's honeycomb topology, known 2 as artificial graphene, can facilitate the investigation of graphene-like phenomena, such as the existence of massless Dirac fermions, in a tunable system. In this work, we present the fabrication of artificial graphene in an ultra-high quality GaAs/AlGaAs quantum well, with lattice period as small as 50 nm, the smallest reported so far for this type of system. Electron-beam lithography is used to define an etch mask with honeycomb geometry on the surface of the sample, and different methodologies are compared and discussed. An optimized anisotropic reactive ion etching process is developed to transfer the pattern into the AlGaAs layer and create the artificial graphene. The achievement of such highresolution artificial graphene should allow the observation for the first time of massless Dirac fermions in an engineered semiconductor.

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Section: Resultsmentioning

confidence: 99%

Fabrication of artificial graphene in a GaAs quantum heterostructure

Scarabelli¹,

Wang²,

Pinczuk³

et al. 2015

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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show abstract

“…However, in some cases, a higher atomic number may not necessarily correspond to a higher density. [28][29][30][31] Rather than adopting a single factor, factors such as the atomic number, average atomic number, and density should be considered together to predict and analyze the mechanism of electron scattering. Therefore, in this paper, we propose a hybrid methodology involving the use of two modified and two basic indices for quantitatively analyzing simulation results related to electron scattering obtained with the Monte Carlo method.…”

Section: Introductionmentioning

confidence: 99%

Low-voltage electron scattering in advanced extreme ultraviolet masks

Liu¹,

Hsieh²

2022

Jpn. J. Appl. Phys.

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To limit the shadowing effect, improve the process stability, and enhance the optical performance of extreme ultraviolet (EUV) masks, several absorbers have been proposed in previous studies. We investigated the effects of some of these absorbers on electron scattering events through Monte Carlo simulations in which the mask throughput was considered at 5 keV. A two-layer structure consisting of a resist and an absorber substrate, rather than a full-mask structure, was used to eliminate the influence of electron scattering on the resist. The effects of electron interaction volume, ray tracing, and scattering dependency on penetration depth, backscattering coefficient, lateral radius, and absorbed energy distribution were analyzed for absorber materials of conventional argon fluoride and advanced EUV masks. The results of the proposed method for electron scattering analysis and prediction exhibited greater agreement with the simulation results than did those of relevant conventional methods.

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“…Therefore, the PSF measurements presented here are accurate for sub-50 nm radius. For further information on the effect of backscattered electrons in the PSF, we refer to refs , , and .…”

mentioning

confidence: 99%

Determining the Resolution Limits of Electron-Beam Lithography: Direct Measurement of the Point-Spread Function

et al. 2014

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One challenge existing since the invention of electron-beam lithography (EBL) is understanding the exposure mechanisms that limit the resolution of EBL. To overcome this challenge, we need to understand the spatial distribution of energy density deposited in the resist, that is, the point-spread function (PSF). During EBL exposure, the processes of electron scattering, phonon, photon, plasmon, and electron emission in the resist are combined, which complicates the analysis of the EBL PSF. Here, we show the measurement of delocalized energy transfer in EBL exposure by using chromatic aberration-corrected energy-filtered transmission electron microscopy (EFTEM) at the sub-10 nm scale. We have defined the role of spot size, electron scattering, secondary electrons, and volume plasmons in the lithographic PSF by performing EFTEM, momentum-resolved electron energy loss spectroscopy (EELS), sub-10 nm EBL, and Monte Carlo simulations. We expect that these results will enable alternative ways to improve the resolution limit of EBL. Furthermore, our approach to study the resolution limits of EBL may be applied to other lithographic techniques where electrons also play a key role in resist exposure, such as ion-beam-, X-ray-, and extreme-ultraviolet lithography.

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The range and intensity of backscattered electrons for use in the creation of high fidelity electron beam lithography patterns

Cited by 10 publications

References 30 publications

Fabrication of artificial graphene in a GaAs quantum heterostructure

Fabrication of artificial graphene in a GaAs quantum heterostructure

Low-voltage electron scattering in advanced extreme ultraviolet masks

Determining the Resolution Limits of Electron-Beam Lithography: Direct Measurement of the Point-Spread Function

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