1995
DOI: 10.21236/ada301555
|View full text |Cite
|
Sign up to set email alerts
|

The Quantum Hydrodynamic Model for Semiconductor Devices.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
4
1

Citation Types

1
193
0

Year Published

1997
1997
2021
2021

Publication Types

Select...
8

Relationship

0
8

Authors

Journals

citations
Cited by 90 publications
(194 citation statements)
references
References 0 publications
1
193
0
Order By: Relevance
“…The parameter ν 0 is proportional to the strength of this interaction, and τ figures as a relaxation time. For derivations of the model, we refer to [5,11].…”
Section: Applicationsmentioning
confidence: 99%
“…The parameter ν 0 is proportional to the strength of this interaction, and τ figures as a relaxation time. For derivations of the model, we refer to [5,11].…”
Section: Applicationsmentioning
confidence: 99%
“…Quantum macroscopic models, including the quantum hydrodynamic models, quantum energy transport models and quantum drift diffusion models, were introduced recently to simulate the miniaturized semiconductor devices where the quantum effects contribute the leading role, [7,5,8], etc. We refer to the references [3,19,16,11] for semiconductor physics and modelling.…”
Section: Introductionmentioning
confidence: 99%
“…Recently, various so-called Quantum Hydrodynamic (QHD) models were used in semiconductor simulations [3]. These models are dispersively regularized versions of the classical hydrodynamic model for semiconductors, where the scaled Planck constant δ plays the role of the dispersivity.…”
Section: Introductionmentioning
confidence: 99%
“…These models are dispersively regularized versions of the classical hydrodynamic model for semiconductors, where the scaled Planck constant δ plays the role of the dispersivity. Using QHD models it was possible to simulate typical quantum effects in semiconductors, like resonant tunneling and negative differential resistance [3].…”
Section: Introductionmentioning
confidence: 99%
See 1 more Smart Citation