The QD-Flash: a quantum dot-based memory device

Marent, A.; Nowozin, Tobias; Geller, M.; Bimberg, D.

doi:10.1088/0268-1242/26/1/014026

Cited by 87 publications

(73 citation statements)

References 29 publications

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“…5 The exclusive confinement of holes and their large localization energy makes GaSb/GaAs QDs particularly interesting for charge storage devices. [6][7][8] GaSb/GaAs QDs were first grown using molecular beam epitaxy 2,9 and later by metal-organic chemical vapor epitaxy, 10,11 followed by optical characterization, 9,[12][13][14][15] cross-section scanning electron microscopy investigations, 16 and deep-level transient spectroscopy (DLTS) studies, 17,18 accompanied by numerical calculations. [19][20][21] The various investigations have been performed on different samples.…”

Section: Introductionmentioning

confidence: 99%

Linking structural and electronic properties of high-purity self-assembled GaSb/GaAs quantum dots

et al. 2012

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Hayne, M. (2012). Linking structural and electronic properties of high-purity self-assembled GaSb/GaAs quantum dots. Physical Review B, 86(3) Please check the document version of this publication:• A submitted manuscript is the version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal.If the publication is distributed under the terms of Article 25fa of the Dutch Copyright Act, indicated by the "Taverne" license above, please follow below link for the End User Agreement: www.tue.nl/taverne Take down policyIf you believe that this document breaches copyright please contact us at: openaccess@tue.nl providing details and we will investigate your claim. We present structural, electrical, and theoretical investigations of self-assembled type-II GaSb/GaAs quantum dots (QDs) grown by molecular beam epitaxy. Using cross-sectional scanning tunneling microscopy (X-STM) the morphology of the QDs is determined. The QDs are of high purity (∼100% GaSb content) and have most likely the shape of a truncated pyramid. The average heights of the QDs are 4-6 nm with average base lengths between 9 and 14 nm. Samples with a QD layer embedded into a pn-diode structure are studied with deep-level transient spectroscopy (DLTS), yielding a hole localization energy in the QDs of 609 meV. Based on the X-STM results the electronic structure of the QDs is calculated using 8-band k·p theory. The theoretical localization energies are found to be in good agreement with the DLTS results. Our results also allow us to estimate how variations in size and shape of the dots influence the hole localization energy.

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Section: Introductionmentioning

confidence: 99%

Linking structural and electronic properties of high-purity self-assembled GaSb/GaAs quantum dots

et al. 2012

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“…Fast carrier capture and long charge storage capabilities of type-II QDs suggest their potential application in memory devices. 1,2 Recent studies have shown that the use of a two-dimensional electron 3,4 or hole 5,6 gas in combination with QDs allows writing and reading information, demonstrating the basic operations required in memory devices.…”

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GaSb/GaAs quantum dot formation and demolition studied with cross-sectional scanning tunneling microscopy

Smakman

Garleff

Young

et al. 2012

Applied Physics Letters

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“…Room temperature operation may be realized by tuning the material compositions of the QDs and the surrounding layers. 50 Hence for the desired room temperature operation, devices based on other material compositions (different Al contents etc.) need to be designed, fabricated and tested.…”

Section: Discussionmentioning

confidence: 99%

Mimicking of pulse shape-dependent learning rules with a quantum dot memristor

Maier

Hartmann

Dias

et al. 2016

Journal of Applied Physics

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We present the realization of four different learning rules with a quantum dot memristor by tuning the shape, the magnitude, the polarity and the timing of voltage pulses. The memristor displays a large maximum to minimum conductance ratio of about 57000 at zero bias voltage. The high and low conductances correspond to different amounts of electrons localized in quantum dots, which can be successively raised or lowered by the timing and shapes of incoming voltage pulses. Modifications of the pulse shapes allow altering the conductance change in dependence on the time difference. Hence, we are able to mimic different learning processes in neural networks with a single device. In addition, the device performance under pulsed excitation is emulated combining the Landauer-Büttiker formalism with a dynamic model for the quantum dot charging, which allows explaining the whole spectrum of learning responses in terms of structural parameters that can be adjusted during fabrication such as gating efficiencies and tunneling rates. The presented memristor may pave the way for future artificial synapses with a stimulus-dependent capability of learning.

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The QD-Flash: a quantum dot-based memory device

Cited by 87 publications

References 29 publications

Linking structural and electronic properties of high-purity self-assembled GaSb/GaAs quantum dots

Linking structural and electronic properties of high-purity self-assembled GaSb/GaAs quantum dots

GaSb/GaAs quantum dot formation and demolition studied with cross-sectional scanning tunneling microscopy

Mimicking of pulse shape-dependent learning rules with a quantum dot memristor

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