2021
DOI: 10.1039/d1mh00006c
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The pursuit of stability in halide perovskites: the monovalent cation and the key for surface and bulk self-healing

Abstract: We find significant differences between degradation and healing at the surface or in the bulk for each of the different APbBr3 single crystals (A=CH3NH3+, methylammonium (MA); HC(NH2)2+, formamidinium (FA); and...

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Cited by 36 publications
(69 citation statements)
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“…[ 57 ] Because of this, the kinetic re‐formation of a damaged surface similar to the known phenomenon of Ostwald ripening takes place in short times, amending many of the defects that would be otherwise present on other, harder, semiconductor surfaces. Similar effects of self‐healing [ 52–56 ] were observed by Yadavalli et al. [ 57 ] which noted cracks formed in mechanically stretched thin films disappear over time once the tensile stress is removed.…”
Section: Effect Of Traps On Charge Transport In Mapbi3supporting
confidence: 75%
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“…[ 57 ] Because of this, the kinetic re‐formation of a damaged surface similar to the known phenomenon of Ostwald ripening takes place in short times, amending many of the defects that would be otherwise present on other, harder, semiconductor surfaces. Similar effects of self‐healing [ 52–56 ] were observed by Yadavalli et al. [ 57 ] which noted cracks formed in mechanically stretched thin films disappear over time once the tensile stress is removed.…”
Section: Effect Of Traps On Charge Transport In Mapbi3supporting
confidence: 75%
“…[57] Because of this, the kinetic re-formation of a damaged surface similar to the known phenomenon of Ostwald ripening takes place in short times, amending many of the defects that would be otherwise present on other, harder, semiconductor surfaces. Similar effects of self-healing [52][53][54][55][56] were observed by Yadavalli et al [57] which noted cracks formed in mechanically stretched thin films disappear over time once the tensile stress is removed. This effect is relevant when the surfaces are macro scopically smooth and have scratches below 1 µm as it is in our case, thanks to our accurate mechanical polishing procedure (see the Experimental Section).…”
Section: Free Hole Transport and Hole Trapssupporting
confidence: 60%
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“…Needless to say, these properties are closely linked to the high material quality required in conventional (GaAs, Si) systems for high performance compared to polycrystalline halide perovskite, which exhibit a high degree of disorder yet work efficiently and are of high optoelectronic quality even when processed from solution. Moreover, low ion migration barriers [ 70 ] in halide perovskite allow efficient self‐healing mechanisms even at room temperatures that have been observed under light [ 71 ] and high energetic irradiation. [ 13 ]…”
Section: Comparing Radiation‐induced Damage In Iii–v On Ge 3j and Perovskite 2j Pvmentioning
confidence: 99%