The properties and applications of the Hg1−xCdxTe alloy system

Dornhaus, Ralf; Nimtz, G.

doi:10.1007/bfb0119322

Cited by 105 publications

(8 citation statements)

References 244 publications

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“…In addition to the recent short review on alloy composition QDs by Regulacio and Han 13 mentioned in the introduction, there are also several comprehensive works on narrow bandgap bulk semiconductors and their alloys that are useful sources of reference for cadmium and mercury telluride related systems. The reviews by Dornhaus and Nimtz 260 on Hg x Cd 1Àx Te materials, and by Rogalski, 261 more centered on optoelectronic applications, are highly recommended starting points for those working on NC versions of these materials.…”

Section: Cadmium and Mercury Chalcogenidesmentioning

confidence: 99%

Narrow bandgap colloidal metal chalcogenide quantum dots: synthetic methods, heterostructures, assemblies, electronic and infrared optical properties

2013

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The chemistry, material processing and fundamental understanding of colloidal semiconductor nanocrystals (quantum dots) are advancing at an astounding rate, bringing the prospects of widespread commercialization of these novel and exciting materials ever closer. Interest in narrow bandgap nanocrystals in particular has intensified in recent years, and the results of research worldwide point to the realistic prospects of applications for these materials in solar cells, infrared optoelectronics (e.g. lasers, optical modulators, photodetectors and photoimaging devices), low cost/large format microelectronics, and in biological imaging and biosensor systems to name only some technologies. Improvements in fundamental understanding and material quality are built on a vast body of experience spread over many different methods of colloidal synthetic growth, each with their own strengths and weaknesses for different materials and sometimes with regard to particular applications. The nanocrystal growth expertise is matched by a rapidly expanding, and highly interdisciplinary, understanding of how best to assemble these materials into films or hybrid composites and thereby into useful devices, and again there are many different strategies that can be adopted. In this review we have attempted to survey and compare the recent work on colloidal synthesis, film and nanocrystal composite material fabrication, concentrating on narrow bandgap chalcogenide materials and some of their topical applications in the solar energy and biological fields. Since these applications are attracting rising interest across a wide range of disciplines, from the biological sciences, device engineering, and materials processing fields as well as the physics and synthetic chemistry communities, we have endeavoured to make the review of these narrow bandgap nanomaterials both comprehensive and accessible to newcomers to the area.

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Section: Cadmium and Mercury Chalcogenidesmentioning

confidence: 99%

Narrow bandgap colloidal metal chalcogenide quantum dots: synthetic methods, heterostructures, assemblies, electronic and infrared optical properties

2013

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“…detectors [139]. The results of work connected with this material have been presented in several studies (for example, [44,140,142,143,144,145]). The perspectives of further work on Hgl-~Cd~Te as the most important material were recently reviewed by the authors who are the coworkers of the most important companies in USA in the field of i.r.…”

Section: Resultsmentioning

confidence: 98%

Isothermal vapour-phase epitaxy of mercury-cadmium telluride (Hg,Cd)Te

Djurić

1995

J Mater Sci: Mater Electron

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Isothermal vapour-phase epitaxy (ISOVPE) was the earliest process to be developed for the fabrication of epitaxial mercury-cadmium telluride layers. Although the process was somewhat neglected in the previous period, mostly because of the appearance of metalorganic chemical vapour phase epitaxy and molecular-beam epitaxy, the results of the most recent investigations show that the application of this method can be expected in the second generation of photovoltaic (PV) or metal-insulator-semiconductor (MIS) detectors in the focal plane. This review paper presents the development of ISOVPE giving a complete theoretical model of the process, which is based on fundamental results in the field of phase diagrams of the (Hg,Cd)Te the interdiffusion of Hg and Cd, gas-phase transport, etc. Using the results of this theoretical model, a production system for ISOVPE was designed, in which the deposition process, the high-temperature annealing for composition homogenization and the low-temperature annealing for the achievement of the desired epitaxial-layer doping are all performed in the same cycle. Finally, the basic electrical and optical characteristics of ISOVPE layers are analysed. It is shown that in applications of the fabrication of PV and MIS detector arrays a full affirmation of this technology can be expected.

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“…With increase of density, the peak gain Table I. The values of the energy band constants for (a) InSb, (b) InAs, (c) Hg 1Àx Cd x Te, and (d) In 1-x Ga x As y P 1-y lattice matched to InP [25,[27][28][29]. values for three-band model of Kane become larger than those for parabolic bands because of the larger reduced density of states available because of nonparabolicity of band structure.…”

Section: Resultsmentioning

confidence: 99%

Generalized optical gain analysis in nonparabolic semiconductor laser

Dey

Maiti

Chanda

2013

Int J Numerical Modelling

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SUMMARY A simple generalized theory is developed for optical gain of nonparabolic semiconductor lasers based on the three‐band model of Kane, by taking into account the wave‐vector (k→) dependence of the optical matrix element. The gain in laser of nonparabolic semiconductors is demonstrated, by taking InAs, InSb, Hg1−xCdxTe and In1−xGaxAsyP1−y lattice matched to InP as examples, and it has been found that the peak of the gain spectra for a given carrier density is higher in the three‐band model of Kane than those with parabolic energy band approximations in all the cases. The difference between the peak of gain spectra for three‐band model and the parabolic band model is greater for laser of narrow band gap materials in comparisons with that of laser of wide band gap materials, thereby reveals the necessity for inclusion of the nonparabolicity in modeling lasers of small band gap materials. The well‐known results for wide band gap materials having parabolic energy bands has also been obtained from our generalized formulation under certain limiting condition. Copyright © 2013 John Wiley & Sons, Ltd.

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The properties and applications of the Hg1−xCdxTe alloy system

Cited by 105 publications

References 244 publications

Narrow bandgap colloidal metal chalcogenide quantum dots: synthetic methods, heterostructures, assemblies, electronic and infrared optical properties

Narrow bandgap colloidal metal chalcogenide quantum dots: synthetic methods, heterostructures, assemblies, electronic and infrared optical properties

Isothermal vapour-phase epitaxy of mercury-cadmium telluride (Hg,Cd)Te

Generalized optical gain analysis in nonparabolic semiconductor laser

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