1985
DOI: 10.1557/proc-47-283
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The Production of Doped Amorphous GaAs by Co-Sputtering With Mo

Abstract: Stoichiometric amorphous GaAs films with intrinsic properties have beer produced by R.F. Sputtering in pure argon at high substrate temperature of 290°C. The electronic and the optical properties of this material have been modified by the molybdenium co-sputtering. This paper reports: on several modified material parameters including the electrical conductivity, thermal activation energy and optical gap. Atomic Mo concentrations up to 1.24% have been investigated. It is observed that the room temperature condu… Show more

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