The probing depth in photoemission and auger-electron spectroscopy

Lindau, I.; Spicer, W. E.

doi:10.1016/0368-2048(74)80024-1

Cited by 481 publications

(103 citation statements)

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“…This corresponds to ∼ 3 -4 quintuple layers (QL). Whereas l < 1 nm at 17.5 eV photon energy, hence the escape depth is less than 1 QL [15][16][17] [22], the actual models suggest that the surface state wave function receives a large (10-20 %) contribution form the second QL. This implies that the Dirac particles extend also below the surface (second and third QLs), and in principle they can be fully probed with a suitable photon energy.…”

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confidence: 99%

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Evidence of reduced surface electron-phonon scattering in the conduction band of Bi2Se3by nonequilibrium ARPES

et al. 2013

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The nature of the Dirac quasiparticles in topological insulators calls for a direct investigation of the electronphonon scattering at the surface. By comparing time-resolved ARPES measurements of the TI Bi2Se3 with different probing depths we show that the relaxation dynamics of the electronic temperature of the conduction band is much slower at the surface than in the bulk. This observation suggests that surface phonons are less effective in cooling the electron gas in the conduction band.The scientific and technological interest on topological insulators (TIs) stems from the unusual properties of their topologically protected metallic surface states, which exhibit a linear dispersion and a characteristic spin helicity [1][2][3][4][5][6][7]. For the Dirac quasiparticles elastic backscattering is forbidden by time-reversal symmetry, and transport is controlled by scattering events mediated by phonons. Attempts to measure the strength of the electron-phonon coupling in the representative TI Bi 2 Se 3 by angle-resolved photoelectron spectroscopy (ARPES) have produced somewhat conflicting results. The estimated values of the dimensionless coupling constant λ vary from small (λ ∼ 0.08) [8] to moderate (λ ∼ 0.25) [9]. Time-resolved ARPES (tr-ARPES) can tackle the problem in the time domain, complementary to the energy domain of conventional ARPES at equilibrium [10][11][12][13]. In pumpprobe tr-ARPES experiments, the electrons excited by a light pulse are described by an effective Fermi-Dirac (FD) distribution. The relaxation of the electronic temperature (T e ), as well as the variation of the chemical potential (µ) that reflects photo-doping of the conduction band, provide fundamental information on the de-excitation mechanisms, namely between the conduction band (CB) and the topologically protected surface state [12,13]. In a recent experiment on Bi 2 Se 3 , the contribution of various phonon modes to the electronic cooling has been addressed by comparing the relaxation dynamics of the FD distribution at various sample temperatures and for different charge densities [12].In this work we present a tr-ARPES investigation of the conduction band dynamics in Bi 2 Se 3 , where two different photon energies are exploited to vary the surface sensitivity. Standard tr-ARPES experiments, performed with laser-based sources at 6.2 eV photon energy, are rather bulk sensitive, due to the very low kinetic energy of the photo-electrons [14]. The comparison between more bulk sensitive (hν = 6.2 eV; UV) and more surface sensitive (hν = 17.5 eV; extreme UV, EUV) measurements reveals two different relaxation dynamics for T e in the conduction band. Namely, we observe a freezing of T e to an elevated value (∼ 600 K) at the surface but not in the bulk, suggesting a reduced efficiency of the phonons in the electronic cooling at the surface.A quantitative estimation of the photo-electron mean free path, l, as a function of the photo-electron kinetic energy is challenging. In particular, it is well established that at low kinetic energies ...

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“…In particular, it is well established that at low kinetic energies (< 5 eV), the photo-electron escape depth is strongly material dependent [15,16]. An estimation of l for Bi 2 Se 3 gives ∼ 2 -3 nm at 6.2 eV photon energy [11].…”

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Evidence of reduced surface electron-phonon scattering in the conduction band of Bi2Se3by nonequilibrium ARPES

et al. 2013

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“…This figure is in good agreement w ith measurements made in other studies . 4 The fact that the carbon signal is significantly attenuated even at low oxygen coverages suggests…”

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The oxidation of carbidic monolayers on Ni(110)

Hudson

1981

Surface Science

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“…Глубина проникновения электронов, возбуждающих процесс ЭСД, очевидно, связана с длиной свободного пробега электронов в твердом теле. Данному вопросу посвящен ряд работ, как экспериментальных, так и теоретических, например [9,10]. Длина свободного пробега электронов в твердом теле λ зависит от их кинетической энергии E e .…”

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Выход Электронно-Стимулированной Десорбции И Глубина Проникновения Возбуждающих Электронов

Кузнецов¹,

Лапушкин²

2017

Письма В Журнал Технической Физики

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Исследованы концентрационные зависимости электронно-стимулированной десорбции (ЭСД) атомов Cs и Na при адсорбции на неметаллических покрытиях, выращенных на W-подложке. Обнаружено, что процессы ЭСД происходят в интерфейсе адсорбированный слой-неметаллическая подложка. Показано, что спад в концентрационной зависимости выхода ЭСД, наблюдающийся после достижения монослойного покрытия, связан с уменьшением количества возбуждающих ЭСД электронов, достигающих интерфейса. DOI: 10.21883/PJTF.2017.14.44827.16777

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The probing depth in photoemission and auger-electron spectroscopy

Cited by 481 publications

References 35 publications

Evidence of reduced surface electron-phonon scattering in the conduction band of Bi2Se3by nonequilibrium ARPES

Evidence of reduced surface electron-phonon scattering in the conduction band of Bi2Se3by nonequilibrium ARPES

The oxidation of carbidic monolayers on Ni(110)

Выход Электронно-Стимулированной Десорбции И Глубина Проникновения Возбуждающих Электронов

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