The printing conditions for 0.13μm features in x-ray lithography using Pohang light Source

The replicated resist pattern characteristics caused by photoelectrons and Auger electrons generated from the W substrate were investigated for 100 nm proximity x-ray lithography. In addition, simulations for a hard x-ray spectrum having 2.36 keV average energy were performed to investigate the substrate electron effects in hard x-ray lithography. In the experiments, it was found that the secondary electrons from the W substrate caused undercut and footing of resist profiles at the resist–substrate interface. Several buffer layers with varying thicknesses were tested to reduce the photoelectron effects from the W substrate. The best thickness of the buffer layers for a good resist pattern profile was discovered to be >30 nm. Furthermore, the experimental results were quantitatively compared to the results from computer simulations using the Monte Carlo method. For hard x rays, we predict that the exposure latitude is worse on both W and Si substrates.

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The printing conditions for 0.13μm features in x-ray lithography using Pohang light Source

Cited by 5 publications

References 11 publications

Characterization of acid diffusion for a negative chemically amplified resist using X-ray proximity lithography

Characterization of acid diffusion for a negative chemically amplified resist using X-ray proximity lithography

Evaluation of advanced epoxy novolac resist, EPR, for sub 100nm synchrotron x-ray proximity lithography

Resist profile characteristics caused by photoelectron and Auger electron blur at the resist–tungsten substrate interface in 100 nm proximity x-ray lithography

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