The preparation and thermoluminescence of alkaline earth sulphide phosphors

Abstract

The present article offers a review of the material preparation and thermoluminescence (TL) of alkaline earth sulphide phosphors. Different methods of material preparation and characterization of alkaline earth sulphides in the form of polycrystalline powders, films, single crystals and pellets are described. In the process of impurity doping, the role of flux is explained. The general theory of TL and the different methods used to calculate the trapping parameters (E and s) from the TL glow curves are presented. The effects of impurities, flux, grain size, preparative parameters etc. on the TL of these materials are reported. The types of trapsand trapping parameters obtained by various workers are given. Considering the results presented by various authors, possible impurity complexes are proposed. The potential applications of these phosphors in TL and OSL dosimetry, cathode ray tubes, electroluminescence panels and infrared sensors are briefly discussed.

TL and PL studies on defect-assisted green luminescence from doped strontium sulfide phosphor

“…Among all the samples, the TL intensity is maximum for sample SPR5 (T m ¼ 382 K). As figured out from two reviews on the AES phosphors [8,9], the TL peaks observed by various workers for SrS host doped with different activators mostly fall in the range 325-375 K where the trapping states are primarily assigned to natural defects of the host. Owing to its maximum TL intensity, this sample SPR5 alone is chosen for further analysis concerning the determination of related kinetic parameters.…”

Thermoluminescence study of UV irradiated Ce doped SrS nanostructures

“…These phosphors have already drawn attention as commercial alternating current thin film electroluminescent (ACTFEL) materials and also find many applications in I.R. sensors, optical memory devices, scintillators and radiation dosimetry [2,[10][11][12][13]. Kumar et al [8,14] have investigated the thermoluminescence properties of CaS:Bi nanophosphors exposed to UV and gamma radiations.…”

Photoluminescent properties of Ba2ZnS3:Mn phosphors

“…Among many semiconductors, wide band gap II-IV compounds such as zinc chalcogenide ZnS [1][2][3] and ZnSe [4][5][6] and alkaline-earth chalcogenide MgS [7][8][9], CaS [10][11][12], SrS [13][14][15] and BaS [16][17][18] doped with activated emission centers are well known to be efficient luminescent materials for the realization of multicolor electroluminescent and cathodoluminescent devices. For emission centers, the transition metal ions and rare-earth ions are found to be suitable.…”