The practical performance forecast and analysis of thermoelectric module from macro to micro

Shen, Limei; Chen, Huanxin; Xiao, Fu; Wang, Shengwei

doi:10.1016/j.enconman.2015.04.060

Cited by 19 publications

(6 citation statements)

References 12 publications

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“…The estimations of the optimal L Ã and the peak cooling power density by Equations ( 21) and ( 22) are validated over a broad range of the heat transfer coefficients from 5 to 5000 W m À2 K À1 , which is able to cover various scenarios, including natural air convection, forced convection, and even liquid-vapor phase change heat transfer. As indicated in Figure 5A,B, the optimal L Ã is in general evaluated within ±15%, while the peak cooling power density calculated by substituting Equation (22) into Equation (21) shows negligible error all over the whole heat transfer and temperature difference range. The fact that a rough estimation of the optimal L Ã still leads to an excellent estimation of the peak cooling power density is illustrated in detail in SI (Dependence of cooling power density on L*).…”

Section: Maximization Of Cooling Power Under Given H H H C and δTmentioning

confidence: 77%

“…First, a heat balance analysis is performed at the thermal interfaces, to derive primary expressions for the cooling power and input electric power. Then a numerical scanning approach is used to seek the maximum cooling power, [17][18][19][20] temperature difference, 21,22 or COP with respect to the electric current. Only a few analytical formulations on the key performance indices are deduced under very limited conditions [23][24][25][26] due to the high complexity.…”

Section: Introductionmentioning

confidence: 99%

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A general White–Box strategy for designing thermoelectric cooling system

Zhu

Deng

Qian

et al. 2022

InfoMat

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Thermoelectric cooling (TEC) is critically important in thermal management of laser modules or chips and potentially for personalized thermoregulation. The formulae for efficiency in standard textbooks can only describe the performance of a TEC module with ideal thermal conditions, that is, fixed terminal temperatures, but are unable to deal with a real TEC system where heat transfer at its interfaces with the heat source and sink are finite and with thermal resistances. Here, we define the TEC system‐level performance indices, that is, the maximum cooling power, temperature difference, and coefficient of performance, by introducing a set of explicit formulae. The external heat transfer conditions are taken into account as dimensionless thermal resistance parameters. With these formulae, the TEC system performances are evaluated elegantly with errors well within ±5% over broad operating conditions. We further optimize the cooling power and the coefficient of performance in practical scenarios and establish a general White–Box design procedure for TEC systems, which enables a transparent design process and straightforward analysis of performance bottlenecks. A set of cooling experiments are performed to validate the analytical model and to illustrate the dependence of system design on realistic thermal conditions. By choosing the suitable TEC module parameter under given external heat transfer conditions, the cooling power can be improved by more than 100%. This work sheds some light on the integral design of TEC systems for broad applications to take full advantage of the advanced thermoelectric materials in the cooling field.image

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Section: Maximization Of Cooling Power Under Given H H H C and δTmentioning

confidence: 77%

Section: Introductionmentioning

confidence: 99%

A general White–Box strategy for designing thermoelectric cooling system

Zhu

Deng

Qian

et al. 2022

InfoMat

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“…With the advent of increasingly outstanding nanostructured thermoelectric materials (TEMs), thin-film thermoelectric coolers (TECs) have drawn increasing attention due to their high cooling flux, fast response time, and small size on the scale of a microchip. 1 However, such high figure of merit material has not yet been engineered for commercial application, and few important improvements in performance of thin-film TECs have been reported in the laboratory as numerous materials because the electrical contact resistance R c at the metal−semiconductor (M−S) interface causes a large increase in the electrical resistance of thin-film TECs (i.e., 230 Ω) 2 that is primarily responsible for diminishing performance. Equation where H is the height of the TE leg, σ is the TE film electrical conductivity, (ZT) m is the figure of merit of the TEM, and (ZT) d is the figure of merit of the TEC.…”

Section: Introductionmentioning

confidence: 99%

Optimization of Interface Materials between Bi₂Te₃-Based Films and Cu Electrodes Enables a High Performance Thin-Film Thermoelectric Cooler

Shen

Chen

Niu

et al. 2022

ACS Appl. Mater. Interfaces

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Thermoelectric interface materials (TEiMs) are key to optimizing the electrical contact and stability of the interface between thermoelectric material and metal electrode in high-performance thin-film thermoelectric coolers (TECs). Herein, we explored TEiMs applicable to representative Bi–Te films and found that Cr and Ag are effective TEiMs for p-type Bi0.5Sb1.5Te3 and n-type Bi2Te3, respectively. By introducing 200 nm Cr and 200 nm Ag as TEiMs for p-type Bi0.5Sb1.5Te3/Cu and n-type Bi2Te3/Cu interfaces, Cu diffusion is suppressed, and excellent electrical contact is achieved (1.81 × 10–12 Ω m2 for p-type and 3.32 × 10–12 Ω m2 for n-type) and remains stable after heat treatment (2.37 × 10–12 Ω m2 for p-type and 1.63 × 10–12 Ω m2 for n-type). Furthermore, the cooling flux of TECs with optimized TEiMs increases from 122.74 to 296.56 W/cm2, while the performance degradation caused by contact resistance decreases from 50.81 to 4.15%. In addition, our results show that diffusion occurs between not only Cu but also Ag and the thermoelectric material, as TEiMs diffuse slightly. The diffusion of Cu and Ag at the interface can optimize the electrical contact of Bi2Te3/Cu but strongly degrade the electrical contacts of Bi0.5Sb1.5Te3/Cu. Our work provides an optimal selection of TEiMs for high-performance Bi–Te thin film coolers and provides guidance for further miniaturization of devices.

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“…Currently, researchers have focused in optimizing the performance of device, like Thomson-effect [6,7], contact resistance [8][9][10], heat exchanger [11,12], leg numbers [13] and geometry [14,15]. Those most favorable design techniques [16][17][18][19] have technically grown with full-fledge. The assemblage of TE devices requires stacking of several layers The most critical malfunction mechanism for TE devices for prolonged procedure [20][21][22] is the higher thermomechanical stress at the boundary.…”

Section: Introductionmentioning

confidence: 99%

Investigation on the impacts of thickness on thermal stress on Thermoelectric materials MoSi₂ and Mo₅SiB₂

Singh

Sharma

2022

IOP Conf. Ser.: Mater. Sci. Eng.

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Thermoelectric cooler employs Peltier effect for dissipating heat in an electronic casing structure. It shows exceptional rewards over conservative cooling skill via quiet process, extended life span, and effortless integration. Nevertheless, Joule heating results in the accumulation of internal heat thereby exposes thermoelectric cooler towards the risk of thermo-mechanical breakdown all through continuous operations in pragmatic thermal surroundings. A relative analysis of the effect of thickness size on thermal stress on MoSi2 and Mo5SiB2 by the COMSOL-Multiphysics platform is offered. Mo5SiB2 in comparison to MoSi2 has lower anisotropic single crystal elastic moduli, along with lower shear modulus. Mo5SiB2 has a slightly higher bulk, shear and Young’s than MoSi2. RT Vickers hardness of Mo5SiB2 is much larger than those of MoSi2. Fracture toughness is comparable to those of MoSi2. In this paper, a 3D module of thermoelectric materials MoSi2 and Mo5SiB2 is designed on the way to examine the effect of thermal stress with increasing thickness of the material taking into consideration the temperature reliant TE material traits. One side of the module is kept at 300K with fixed constraints while the other side is kept at 1200K. It has been observed that the thermal stress induced in MoSi2 and Mo5SiB2 decrease exponentially with increase in thickness of the material. Beyond thickness of 500 nm, the incremental difference in thermal stress is not large although a slight rise in stress level is observed at thickness 700 nm. It was found that the induced thermal stress for a particular thickness in Mo5SiB2 is lower than MoSi2. For MoSi2, the voltage swings across the length is from -2.42mV to 1.09 mV whereas for Mo5SiB2, the voltage swings across the length is from -1.87 mV to 1.64 mV. It was found that excessive elevated levels of thermal strain may source the dislocations as well as cracks in the layers of the material.

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The practical performance forecast and analysis of thermoelectric module from macro to micro

Cited by 19 publications

References 12 publications

A general White–Box strategy for designing thermoelectric cooling system

A general White–Box strategy for designing thermoelectric cooling system

Optimization of Interface Materials between Bi₂Te₃-Based Films and Cu Electrodes Enables a High Performance Thin-Film Thermoelectric Cooler

Investigation on the impacts of thickness on thermal stress on Thermoelectric materials MoSi₂ and Mo₅SiB₂

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The practical performance forecast and analysis of thermoelectric module from macro to micro

Cited by 19 publications

References 12 publications

A general White–Box strategy for designing thermoelectric cooling system

A general White–Box strategy for designing thermoelectric cooling system

Optimization of Interface Materials between Bi2Te3-Based Films and Cu Electrodes Enables a High Performance Thin-Film Thermoelectric Cooler

Investigation on the impacts of thickness on thermal stress on Thermoelectric materials MoSi2 and Mo5SiB2

Contact Info

Product

Resources

About

Optimization of Interface Materials between Bi₂Te₃-Based Films and Cu Electrodes Enables a High Performance Thin-Film Thermoelectric Cooler

Investigation on the impacts of thickness on thermal stress on Thermoelectric materials MoSi₂ and Mo₅SiB₂