The Power Effect in Write-in Process of Ag-TCNQ Electric Recording Thin Film

Wan, Xiaobing; Li, Jin; Chen, Dian-Yong; Jiang, Yiming; Hua, Zhongyi

doi:10.1002/1521-396x(200010)181:2<r13::aid-pssa999913>3.0.co;2-e

Cited by 12 publications

(3 citation statements)

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“…Compared with traditional M-TCNQ bulk or thin film materials average charge transfer process in molecules, the temporal response of Cu(TCNQ) nanowires appeared to be faster. In particular, the previous temporal response measured on Ag(TCNQ)[17] and K(TCNQ)[6] thin film exhibits a slower delay time T d in ȝs order when the voltage on sample rises from 0 V to its switching threshold as illustrated in Fig. 5B, whereas such effect could be neglected in Cu(TCNQ) nanowire.…”

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confidence: 93%

The Electrical Switching Characteristics of Single Copper Tetra-cyanoquinodimethane Nanowire

et al. 2010

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In this paper, method combined vapor transportation with in-situ chemical reaction is employed to synthesize Cu(TCNQ) nanowires. The typical diameter of nanowires is 50-500 nm with high uniformity. The electrical switching characteristics of single nanowire are observed. The ON-OFF resistance ratio for switching reaches 10 4. The investigation reveals a linear relationship between the switching threshold and the spacing between the two electrodes. The temporal response of the switching process is 30 ns and the switch exhibits good reproducibility. The collapse of the nanowire under the condition of current surge is also discussed. It is believed that the Cu(TCNQ) nanowire could be promising for applications in nanoelectronics.

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confidence: 93%

The Electrical Switching Characteristics of Single Copper Tetra-cyanoquinodimethane Nanowire

et al. 2010

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“…Aiming to implement this effect in genuine devices, the electrical switching of the material has to be understood on small scales. So far, experimental studies have mainly been carried out on Ag-TCNQ thin films [4,8,11] or large-scale arrays of Ag-TCNQ NWs [12,13]. Recent advances in the controlled synthesis of free-standing, highly crystalline Ag-TCNQ NWs [6,14,15] enable studies on individual nanowires.…”

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confidence: 99%

Switching behaviour of individual Ag-TCNQ nanowires: anin situtransmission electron microscopy study

et al. 2016

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The organic semiconductor silver-tetracyanoquinodimethane (Ag-TCNQ) exhibits electrical switching and memory characteristics. Employing a scanning tunnelling microscopy setup inside a transmission electron microscope, the switching behaviour of individual Ag-TCNQ nanowires (NWs) is investigated in detail. For a large number of NWs, the switching between a high (OFF) and a low (ON) resistance state was successfully stimulated by negative bias sweeps. Fitting the experimental I-V curves with a Schottky emission function makes the switching features prominent and thus enables a direct evaluation of the switching process. A memory cycle including writing, reading and erasing features is demonstrated at an individual NW. Moreover, electronic failure mechanisms due to Joule heating are discussed. These findings have a significant impact on our understanding of the switching behaviour of Ag-TCNQ.

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“…Metalorganic complexes, such as Ag-7,7,8,8-tetracyanoquinodimethane (TCNQ) and Cu-TCNQ, which will play an important role in high-density information storage, have been widely studied in the past decades because of their special properties. [1][2][3][4][5][6][7][8][9][10][11][12][13][14] The preparation methods of these complexes include chemical methods [1][2][3][4][5][6][7][8][9][10][11] and physical vapor deposition methods. [12][13][14] Vacuum evaporation is one of the extensively used methods of obtaining homogeneous films.…”

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confidence: 99%