1995
DOI: 10.1007/bf00362121
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The positive temperature coefficient of resistivity in barium titanate

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Cited by 296 publications
(153 citation statements)
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“…It is seen from the figure that a considerable amount of Al ions is segregated ͓Al/ ͑Al+ Ti͒Ϸ0.04͔ at the grain boundary core, whereas Al ions are rarely detected ͓Al/ ͑Al+ Ti͒Ϸ0.00͔ in the region ϳ10 nm away from the boundary core. It is thus evident that, in H 2 , the solubility of Al acceptor in Nb-containing SrTiO 3 is negligible and Al ions segregate at grain boundaries, similar to the case of pure SrTiO 3 or BaTiO 3 . 17,19 On the other hand, Nb donors up to 2.4 at.…”
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confidence: 86%
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“…It is seen from the figure that a considerable amount of Al ions is segregated ͓Al/ ͑Al+ Ti͒Ϸ0.04͔ at the grain boundary core, whereas Al ions are rarely detected ͓Al/ ͑Al+ Ti͒Ϸ0.00͔ in the region ϳ10 nm away from the boundary core. It is thus evident that, in H 2 , the solubility of Al acceptor in Nb-containing SrTiO 3 is negligible and Al ions segregate at grain boundaries, similar to the case of pure SrTiO 3 or BaTiO 3 . 17,19 On the other hand, Nb donors up to 2.4 at.…”
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confidence: 86%
“…͓DOI: 10.1063/1.2236212͔ Nonlinear electrical properties of electroceramics have been widely utilized for such devices as varistors, thermistors, boundary layer capacitors ͑BLCs͒, sensors, and switching devices. [1][2][3][4] The origin of the nonlinear properties is well known to be related to the electrically active grain boundaries in polycrystals.2,3,5-7 A number of investigations using high resolution transmission electron microscopy ͑HR-TEM͒ and nanometer scale analysis have shown that the nonlinear properties vary considerably with the chemical composition and structure of the grain boundariesspecifically the height of the potential barrier, the density of defects, and the impurities at the grain boundaries. [8][9][10][11][12][13] One of the key processing parameters that control these grain boundary properties is the doping of impurity elements.…”
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“…[14][15][16][17][18] Undoped BaTiO 3 is an insulator and as such cannot be used as a PTC thermistor. To that end, BaTiO 3 is n-type doped by replacing Ba with a trivalent donor such as La or by replacement of Ti by pentavalent Nb.…”
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confidence: 99%