The Poly-Si Tfts Fabricated by Novel Oxidation Method with Intermediate Oxide

Abstract

We have fabricated a poly-Si TFT using a novel oxidation method, which improves the surface roughness at the interface between the poly-Si layer and the gate oxide layer. Compared with the poly-Si TFTs fabricated by the conventional oxidation method, the proposed poly-Si TFT exhibits the remarkable enhancement of the electrical parameters, such as the subthreshold swing and the threshold voltage. It is observed that the proposed poly-Si TFT has a higher dielectric strength and the device characteristics are not degraded significantly after an electrical stress. The improvement of the surface roughness at oxide/poly-Si interface is found to be critical to enhance the device performance.

Changes in quality of life and working capacity before and after kidney transplantation

“…1,2 Debates regarding the quality of life (QOL) of dialysis and transplant recipient groups have been ongoing for about two decades. [3][4][5][6][7][8][9][10][11] Although most studies show that QOL is one of the most important benefits of KT, 3,[7][8][9][10][11][12][13][14][15][16][17][18][19][20][21][22][23][24] some researchers still argue that KT does not significantly improve QOL over dialysis. 4 -6 The health-related QOL of KT recipients is a complex phenomenon.…”