1998
DOI: 10.1063/1.55027
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The polarized electron source at NIKHEF

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Cited by 8 publications
(8 citation statements)
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“…An inverted gun design [16] reduces the amount of metal biased at high voltage, and if field emission occurs, the electrons are less likely to strike the insulator due to the orientation of the electrostatic field lines. Segmented insulators [9] successfully shield the insulator from field emission and a recent demonstration indicates successful operation at 500 kV [17]. Field emission coatings [18] once seemed promising but unfortunately, serve to trap gas which is liberated during high voltage processing.…”
Section: Introductionmentioning
confidence: 99%
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“…An inverted gun design [16] reduces the amount of metal biased at high voltage, and if field emission occurs, the electrons are less likely to strike the insulator due to the orientation of the electrostatic field lines. Segmented insulators [9] successfully shield the insulator from field emission and a recent demonstration indicates successful operation at 500 kV [17]. Field emission coatings [18] once seemed promising but unfortunately, serve to trap gas which is liberated during high voltage processing.…”
Section: Introductionmentioning
confidence: 99%
“…Some applications require high bunch charge [2] or small beam emittance [3] and for these circumstances it is beneficial to operate the photogun at very high bias voltage ($ 500 kV) and high field strength (> 10 MV=m) to produce a relativistic beam insensitive to space charge forces that degrade beam quality. The first DC high voltage photogun used at an accelerator operated at 100 kV [4] and many photoguns operating near this voltage were constructed shortly afterwards [5][6][7][8][9][10]. The Jefferson Lab Free Electron Laser employed the first photogun to operate at significantly higher voltage, $320 kV [11].…”
Section: Introductionmentioning
confidence: 99%
“…The basis for these introductory comments stems from reports of accelerator operation at a handful of locations [4][5][6][7][8]. Notably, the Jefferson Lab (JLab) free electron laser (FEL) employs GaAs inside a dc high voltage photogun biased at 350 kV and routinely operates at 5 mA average current [8], although occasional high voltage discharges sometimes necessitate time consuming photocathode replacement.…”
Section: Introductionmentioning
confidence: 99%
“…The Jefferson Lab (JLab) inverted DC gun [2] has generated high average current in mA class with couple pC bunch charge while the SLC DC gun [3] has generated 10 nC with several μA's. Other labs such as MAMI [4], MIT-BATE [5], Bonn-ELSA [6] or NIKHEF [7] also tested and operated the polarized electron sources, but their results are less than the JLab and SLC results. However, none of them demonstrated high bunch charge (>100pC) and high average current (>1mA) simultaneously.…”
Section: The Hv DC Photo-gunmentioning
confidence: 99%