2010
DOI: 10.1149/1.3496427
|View full text |Cite
|
Sign up to set email alerts
|

The Point Defect Model for Bi-Layer Passive Films

Abstract: The Point Defect Model (PDM) has been shown to accurately describe the properties of passive films that form on metal surfaces in contact with aggressive environments under both open circuit and anodic polarization conditions. However, the commonly-employed PDM, known henceforth as PDM-II assumes that passivity arises from the properties of the barrier layer and that the outer layer, if present, contributes negligibly to the interfacial impedance. In this paper, we describe PDM-III, in which a resistive oute… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1
1

Citation Types

1
35
0
1

Year Published

2015
2015
2023
2023

Publication Types

Select...
7
2

Relationship

0
9

Authors

Journals

citations
Cited by 79 publications
(37 citation statements)
references
References 23 publications
(70 reference statements)
1
35
0
1
Order By: Relevance
“…No active‐to‐passive transition was evident in Region 1, indicating that the active state did not exist in sulphide‐containing solutions, whereas a typical active‐to‐passive transition existed in Region 2, which showed an increase in the current density; details of the reactions are described in the subsequent section. Our previous work, which is cited in this paper, showed unequivocally that, in the presence of sulphide in Region 1, the passive film has a bi‐layer structure comprising a compact barrier layer of cuprous sulphide and a precipitated outer layer of either cuprous or cupric sulphide, depending on the exact conditions.…”
Section: Resultsmentioning
confidence: 71%
“…No active‐to‐passive transition was evident in Region 1, indicating that the active state did not exist in sulphide‐containing solutions, whereas a typical active‐to‐passive transition existed in Region 2, which showed an increase in the current density; details of the reactions are described in the subsequent section. Our previous work, which is cited in this paper, showed unequivocally that, in the presence of sulphide in Region 1, the passive film has a bi‐layer structure comprising a compact barrier layer of cuprous sulphide and a precipitated outer layer of either cuprous or cupric sulphide, depending on the exact conditions.…”
Section: Resultsmentioning
confidence: 71%
“…According to the point defect model, [38,49,50,51] the thickness of the barrier oxide layer through which tunneling must occur can be written as:Lss=1αεV+g where ε is the electric field strength, and g is a function of pH and the standard rate constants for film formation at the metal/barrier layer (m/bl) interface and the dissolution rate at the bl/s interface, among other parameters (see Equation (3)). Substitution of Equation (10) into Equation (8) yields the tunneling current as:i=truei0^etrueβ^(1αε)Veβg.…”
Section: Discussionmentioning
confidence: 99%
“…(3). According to the point defect model [13][14][15][16][17][18], the thickness of the barrier oxide layer through which the tunnelling occurs can be expressed as…”
Section: Quantum Tunnelling Definition Of Current Densitymentioning
confidence: 99%