“…The rates of the site-specific reactions were user-controlled parameters that were determined by comparison to experimental morphologies. ,, On the basis of previous investigations of the reactivity of H/Si(111) in a variety of solutions, ,, five different reactive sites were included in the simulation: kinks, points, dihydride-terminated steps, monohydride-terminated steps, and terrace sites. Two additional reactive sites which must exist at least transiently during etching, trihydrides and strained horizontal dihydrides, have never been observed experimentally and were assumed to etch immediately upon formation.…”