The Physics of Tunable Disorder in Semiconductor Alloys

Mascarenhas, A.; Zhang, Yong

doi:10.1007/978-1-4615-0631-7_11

Cited by 14 publications

(17 citation statements)

References 136 publications

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“…Variation in sample growth conditions and composition along with a lack of consistent characterisation tend, however, to make sample comparison difficult. The maximum value of ∆E BGR has been reported as 0.471 eV [6] but this value and the validity of the η 2 rule are questioned closely in [7]. The best fit to the current experimental data is found in [7] to be that proposed by [8] and gives a maximum value for ∆E BGR of 0.223 eV.…”

Section: Introductionmentioning

confidence: 68%

Determination of ordering effects on GaInP pressure coefficients

Prins¹,

Sly

Dunstan

et al. 2004

Physica Status Solidi (b)

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We report the determination of pressure coefficients for ordered and disordered GaInP samples measured in the same diamond anvil cell experiment at 10 K. Results are compared to measurements using substrate calibration and data available in the literature. Using previous theoretical calculations and experimental work we propose a linear model based on the band-gap reduction with ordering to calculate pressure coefficients. To date this is the only available method to quantifying this change. All layers measured were grown nominally lattice matched to GaAs.

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Section: Introductionmentioning

confidence: 68%

Determination of ordering effects on GaInP pressure coefficients

Prins¹,

Sly

Dunstan

et al. 2004

Physica Status Solidi (b)

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“…A more subtle situation is the well studied partial long-range ordering that has often been observed in III-V semiconductor alloys, Ga x In 1-x P in particular. [26] To some extent, it is still useful to use the VCA states to characterize the alloy state in a partially ordered structure. [15] However, it would be a non-trivial task to separate the effects of long-range ordering and alloy fluctuation, if one attempts to calculate the scattering rate and further the carrier mobility, using the scattering matrix element based on the VCA.…”

Section: An Alloy Transport Theory Not Relying On a Reference System?mentioning

confidence: 99%

Global electronic structure of semiconductor alloys through direct large-scale computations for III-V alloys GaxIn1−xP

Zhang

Wang

2011

Phys. Rev. B

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We critically examine two nominally equivalent approaches for treating a random alloy: (1) using one very large supercell as a direct simulation of the alloy, and (2) performing configuration averaging over many smaller supercells; and the common practice using a virtual-crystal as the reference for analyzing the alloy band structure and discussing the electronic transport in the alloy. Specifically, (1) we show that in practice the size of the "very large" supercell depends on the particular property of interest, and the ideal of the configuration averaging is only useful for certain properties; (2) we examine the assumed equivalency by comparing the results of the two approaches in bandgap energy, energy fluctuation, and inter-valley and intra-valley scatterings, and conclude that the two approaches often lead to non-equivalent physics; (3) by using a generalized moment method that is capable of computing the global electronic structure of a sufficiently large supercell (e.g., ~ 260,000 atoms), we are able to obtain the intrinsic broadening of a Γ-like electron state, caused by the "inelastic" intra-valley scattering, in a direct bandgap semiconductor alloy; (4) we demonstrate an efficient way to construct the effective dispersion curves of the alloy, with high accuracy for calculating effective masses and examining anisotropy and nonparabolicity of the dispersion curve; and (5) finally, we discuss the limitation of using virtual crystal approximation as the reference for evaluating the alloy scattering and studying the transport property.2

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“…This is done by fitting the data with a linear function at points far enough from the line source and subtracting the resulting background prior to fitting the data with the decaying exponential in equation (3).…”

Section: Data Analysis and Determination Of Minority Carrier Diffusiomentioning

confidence: 99%

“…GaInP is a ternary III-V alloy that is of fundamental interest due to its tendency for spontaneous ordering and the resultant effects on bandgap, effective mass and optical anisotropy [3]. It is used extensively in solar cell applications and forms the top cell material in multi-junction solar cells that have exhibited efficiencies reaching 40% [4].…”

Section: Introductionmentioning

confidence: 99%

Minority carrier lifetime variations associated with misfit dislocation networks in heteroepitaxial GaInP

Haegel

Williams

Frenzen

et al. 2010

Semicond. Sci. Technol.

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Variations in minority carrier transport properties associated with networks of misfit dislocations have been measured using a unique optical technique in p-type GaInP grown on Ge. The diffusion length L of minority carriers has been measured with a spatial resolution of 0.4 μm in regions showing alternating light and dark luminescence bands. Periodic variations of ±4% from a mean diffusion length of 3.9 μm were measured and found to be anti-correlated to intensity fluctuations. A model based on the coupling between luminescence intensity and minority carrier lifetime allows for the extraction of spatial variation of both radiative and non-radiative lifetimes. For this high quality material, with relatively low concentrations of non-radiative recombination centers, the results indicate variations in radiative recombination lifetime associated with dopant fluctuations.

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The Physics of Tunable Disorder in Semiconductor Alloys

Cited by 14 publications

References 136 publications

Determination of ordering effects on GaInP pressure coefficients

Determination of ordering effects on GaInP pressure coefficients

Global electronic structure of semiconductor alloys through direct large-scale computations for III-V alloys GaxIn1−xP

Minority carrier lifetime variations associated with misfit dislocation networks in heteroepitaxial GaInP

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