The photoluminescence spectrum of bound excitons in indium phosphide and gallium arsenide

White, A. M.; Dean, P.D.G.; Taylor, L. L.; Clarke, R.C.; Ashen, D.J.; Mullin, J. B.

doi:10.1088/0022-3719/5/13/020

Cited by 115 publications

(17 citation statements)

References 28 publications

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“…Similar emission lines have been observed in many other materials, CdTe, 14 GaAs, 15,16 CdS, 17 and ZnSe. 13 These transitions were first interpreted as excited states of the neutral-donor-bound-exciton D 0 ,X but with very little detail as to their nature.…”

Section: Introductionsupporting

confidence: 83%

Neutral-donor–bound-exciton complexes in ZnO crystals

et al. 1998

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Neutral-donor-bound-exciton transitions have been observed in ZnO. The isolated neutral donors are made up of defect pair complexes. The neutral-donor nature of these pair complexes was determined from magneticfield measurements and from two-electron transitions. Excited states of the neutral-donor bound excitons were observed in the form of rotator states analogous to rotational states of the H 2 molecule.

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Section: Introductionsupporting

confidence: 83%

Neutral-donor–bound-exciton complexes in ZnO crystals

et al. 1998

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“…This peak has been observed previously5, 8,9 in MBE and MOCVD grown InP, and has been tentatively attributed to a phosphorus vacancy complex.5 The relative photoluminesence intensity of this peak to the excitonic band edge peak increases linearly with decreasing phosphorus overpressure at 450 °C substrate growth temperature as seen in Fig. 3.…”

Section: Resultssupporting

confidence: 76%

Selected Photoluminesence Transitions In Unintentionally Doped Inp Grown By Molecular Beam Epitaxy

Ovadia

Iliadis

1988

SPIE Proceedings

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Photoluminesence data of unintentionally doped InP grown by molecular beam epitaxy are presented in order to clarify the origin of the 1.380 eV emission band and the 1.360 eV radiative transition. The 1.380 eV emission band was found to consist of a number of transitions which were attributed to Ca, Mg and C impurities.The SIMS analysis is in support of this result. The 1.360 eV radiative transition has been previously reported to be related to a phosphorus vacancy complex. Our results are in support of this observation.In addition, a split of 0.8 meV has been observed for this peak and was attributed to elastic strain.The effect of these transitions on the optical properties of the epitaxial InP is discussed.

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“…Up to 11 different emission lines (or shoulders) can be observed. The l~eak at 1.4184 eV has been identified as the free excitonpolariton emission (22,26). Two weak lines are observed at 1.4181 eV (not previously reported) and at 1.4179 eV, which have not been explained so far.…”

Section: Lpe--apparatus and Experimental Proceduresmentioning

confidence: 79%

“…Such a half width is characteristic for the decay of bound excitons. These transitions appear in the energy range expected for excitons bound to neutral donors (D~ (22,26). The spectra of most layers show a broad emission at 1.416 eV.…”

Section: Lpe--apparatus and Experimental Proceduresmentioning

confidence: 87%

Liquid Phase Epitaxy of InP

Hess

Stath²,

Benz³

1974

J. Electrochem. Soc.

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Liquid phase epitaxy by conventional tipping technique has been employed for the growth of high purity InP epitaxial layers. The layers were grown at 720~176on (100) and (111) oriented InP substrates. Characteristic surface structures for the substrate orientations as a function of the growth temperature were observed. The layers were characterized by Hall data and photoluminescence measurements at low temperatures. The simultaneous observation of the band-acceptor and donor-acceptor pair transition due to the main acceptor in our LPE-layers is reported. The binding energy of this acceptor is determined to EA1 = 41.0 meV (• meV).During the last years there has been an increasing interest in high purity epitaxial layers of InP, for instance for Gunn effect applications (1). So far, high purity epitaxial layers were grown by vapor phase epitaxy in particular by the Effer method (2, 3). Net electron concentrations of n --4 9 1014 cm -~ and mobilities of ~77K : 87,000 cm 2 V -1 sec -1 were obtained. In the case of GaAs liquid phase epitaxy (LPE) has been very successful in the preparation of high purity epitaxial layers (4-8). One should therefore expect similar good results for the case of InP. In this paper the growth of high purity InP layers is described in connection with Hall data and photoluminescence measurements at low temperatures. Previous works on InP LPE were done by several authors (9-11). The best values for the LPE-layers with ND --NA ----2 9 1015 cm -3 and ~77K ----49,000 cm 2 V-' see-' were reached by Wood et al. (11). Recently Astles et al. (12) have reported on the growth of InP by LPE from solutions saturated with P from PH3. Values of ND --NA ----3 9 10 '5 cm -3 and #77 ----27,000 cm 2 V-' see -1 have been reported. LPE--Apparatus and Experimental ProcedureThe experience from LPE growth of high purity GaAs has been that the growth results are strongly influenced by the way in which the growth process is performed (13,14). Important steps are: (i) heating of In-InP solution, (ii) preparation of the single-crystal substrate, (iii) equilibration and homogenization of the solution, and (iv) tipping the solution on the substrate. In the following we describe the corresponding conditions for InP-LPE. For the growth experiments we used a tipping system (14) (schematically shown in Fig. 1). The reaction tube was made of suprasil quartz, the boat for the In-InP solution of high purity graphite. The tube and boat were locked together and could be rotated around the long axis for immersion and withdrawal of the substrate from the solution. To avoid air leaks we used a Pyrex spiral which allowed the rotation of the tube without moving joints. The furnace was transparent (15) in order to observe substrate and solution. The graphite boat was heated at T ----1600~ under a vacuum of 10 -6 Torr for 3 hr. After that, the boat was loaded with 6N In (Johnson Matthey Limited, England) and baked at T : 730~ in the reaction tube for 10 hr under a Pd-diffused H2 gas flow. At the end of this procedure the boat was coole...

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The photoluminescence spectrum of bound excitons in indium phosphide and gallium arsenide

Cited by 115 publications

References 28 publications

Neutral-donor–bound-exciton complexes in ZnO crystals

Neutral-donor–bound-exciton complexes in ZnO crystals

Selected Photoluminesence Transitions In Unintentionally Doped Inp Grown By Molecular Beam Epitaxy

Liquid Phase Epitaxy of InP

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