The photoluminescence emission in the 0.7-0.9 eV range from oxygen precipitates, thermal donors and dislocations in silicon

Pizzini, S.; Guzzi, M.; Grilli, E.; Borionetti, G.

doi:10.1088/0953-8984/12/49/312

Cited by 54 publications

(29 citation statements)

References 29 publications

(46 reference statements)

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“…11) observed by Liesert et al [6]. If we consider that the P-line emission correspond to a radiative transition between a donor level at Ec-0.0015 eV and the deep trap at Ev+0.37 eV we could fit within few meV the P line emission energy at 0.767 eV, and conclude that the P luminescence originates from a transition from a OTD level to a deep level corresponding to a C-O complexes, as already proposed by some of us in a former article [3]. About the second issue, we have demonstrated that OTDs emit light at room temperature, although with a hundredfold decrease of intensity with respect to cryogenic temperatures.…”

Section: Czm Samplessupporting

confidence: 57%

“…In fact, while it is well known that oxygen rich silicon annealed at 450 'C for several hours exhibits a prominent photoluminescence spectrum with a narrow no-phonon line at 0.767 eV, generally labelled P line [2], a direct proof that oxygen is incorporated in the centre has not yet been given. Furthermore, PL measurements have cast doubts on a simple relationship between thermal donors and the P line [3]. Eventually, a carbon isotopic effect experimentally determined in the P line shows a possible involvement of carbon-oxygen complexes in the defect involved in the P line luminescence [2].…”

Section: Introductionmentioning

confidence: 99%

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Radiative recombination processes of thermal donors in silicon

et al. 2001

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There is a recent, renewed attention on the possible development of optical emitters compatible with silicon microelectronic technology and it has been recently shown that light emitting diodes could be manufactured on dislocated silicon, where dislocations were generated by plastic deformation or ion implantation. Among other potential sources of room temperature light emission, compatible with standard silicon-based ULSI technology, we have studied old thermal donors (OTD), as the origin of their luminescence is still matter of controversy and demands further investigation.In this work we discuss the results of a spectroscopical study of OTD using photoluminescence (PL) and Deep Level Transient Spectroscopy (DLTS) on standard Czochralsky (Cz) silicon samples and on carbon-doped samples. We were able to show that their main optical activity, which consists of a narrow band at 0.767 eV ( P line), is correlated to a transition from a shallow donor level of OTD to a deep level at Ev+0.37 eV which is tentatively associated to C-O complexes. As we have shown that the P line emission persists at room temperature, we discuss about its potentialities to silicon in optoelectronic applications.

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Section: Czm Samplessupporting

confidence: 57%

Section: Introductionmentioning

confidence: 99%

Radiative recombination processes of thermal donors in silicon

et al. 2001

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“…They also observed pairwise similarity between D1/D2 and D3/D4 regarding their spatial distribution. Oxygen precipitates has also been found to be a possible origin of the D-lines by Pizzini et al 10 and Tajima et al 11 Arguriov 12 proposed D1 and D2 to be generated by transitions between one-dimensional bands on 60…”

Section: B D-linesmentioning

confidence: 96%

Distribution of radiative crystal imperfections through a silicon ingot

et al. 2013

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Crystal imperfections limit the efficiency of multicrystalline silicon solar cells. Recombination through traps is more prominent in areas with high density of crystal imperfections. A method to visualize the distribution of radiative emission from Shockley Read Hall recombination in silicon is demonstrated. We use hyperspectral photoluminescence, a fast non-destructive method, to image radiatively active recombination processes on a set of 50 wafers through a silicon block. The defect related emission lines D1 and D2 may be detected together or alone. The D3 and D4 seem to be correlated if we assume that an emission at the similar energy as D3 (VID3) is caused by a separate mechanism. The content of interstitial iron (Fei) correlates with D4. This method yields a spectral map of the inter band gap transitions, which opens up for a new way to characterize mechanisms related to loss of efficiency for solar cells processed from the block.

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“…In the samples with high oxygen concentrations [O i ∼10 18 cm -3 ] the additional band is generally shifted to the high energy side from D1 line. The maximum position of this band is not constant and depends on high temperature treatment in a non-monotone way [11]. Thus one can conclude that during plastic deformation the process of oxygen gettering by dislocations takes place, which leads to a gradual transformation of DRL.…”

Section: Introductionmentioning

confidence: 92%

Influence of oxygen on the dislocation related luminescence centers in silicon

Steinman

2005

phys. stat. sol. (c)

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Dislocation related luminescence (DRL) centres in Si have high stability to a thermal treatment of samples and a relatively low temperature quenching. These properties make them an attractive candidate for production of Si based light emitting diodes (LEDs). The low energy part of DRL in the vicinity of the D1 line is the most promising from this point of view due to its highest temperature stability and best coupling to fiber optics. Actually this part of DRL can be divided into several bands. One of them with a position 807 meV is known as D1 line. The substantial effect on D1 luminescence has oxygen. The line becomes broader and several subbands can be identified on the low and high energy side after prolonged annealing of deformed samples. Depending on particular treatment some of these bands could be even more intensive than the original D1 line. The strongest effect is usually observed in oxygen rich CZ crystals. In all cases the presence of dislocations is necessary for the appearance of the low energy bands. Several observations clearly show that the corresponding recombination centres include the dislocation related defect as well as some oxygen complexes. It implies that inclusion and mutual configuration of constituents defines the energy of optical transitions in the region of D1 band. In the present paper a review of previous investigations as well as new results regarding oxygen dislocations interaction are presented.

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The photoluminescence emission in the 0.7-0.9 eV range from oxygen precipitates, thermal donors and dislocations in silicon

Cited by 54 publications

References 29 publications

Radiative recombination processes of thermal donors in silicon

Radiative recombination processes of thermal donors in silicon

Distribution of radiative crystal imperfections through a silicon ingot

Influence of oxygen on the dislocation related luminescence centers in silicon

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