The photoelectrochemical properties of Sn2Nb2O7 photoanode

Liu, Jing; Han, Dongyuan; Wang, Xiaona; Cai, He; Jia, Lan; Wang, Jiwei; Shi, Haifeng; Guo, Qiang; Fan, Xiaoxing

doi:10.1016/j.jallcom.2018.09.170

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Cited by 4 publications

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“…The linear region with a positive slope reects the N-type semiconductor behavior of the passivation lm, while the linear region with a negative slope reects the P-type semiconductor behavior of the passivation lm. 37 The larger the absolute value of the slope, the lower the carrier density in the semiconductor, which indicates that there are fewer defects in the passivation lm and it possesses a stronger protective ability. 38 The carrier density and the slope and intercept of the tting line are also listed in Table 3.…”

Section: Resultsmentioning

confidence: 99%