1998
DOI: 10.1016/s0960-1481(98)00058-5
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The photo-electric and thermal properties of vacuum deposited CdS thin films

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Cited by 7 publications
(3 citation statements)
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“…CdS, with band gap of 2.4 eV at room temperature, is the most suitable material for CdTe-based solar cells. The work of [17][18][19] showed that without special doping, the CdS films have significantly higher carrier concentration than the CdTe. The third layer is the absorber layer of CdTe, which is usually from 5 -10 µm thick film.…”
Section: Laboratory Preparations and Solar Cell Structurementioning
confidence: 99%
“…CdS, with band gap of 2.4 eV at room temperature, is the most suitable material for CdTe-based solar cells. The work of [17][18][19] showed that without special doping, the CdS films have significantly higher carrier concentration than the CdTe. The third layer is the absorber layer of CdTe, which is usually from 5 -10 µm thick film.…”
Section: Laboratory Preparations and Solar Cell Structurementioning
confidence: 99%
“…It also has acceptable conversion efficiency, adequate absorption coefficient in addition to its low cost. Thin films, in general, have been subjected to numerous theoretical [5] and practical [6] research works. But on the other hand, further research is required to fully understand and improve the materials properties.…”
Section: Introductionmentioning
confidence: 99%
“…Badawi et al [7] studied the optical transmittance of the chemically deposited CdS films. Mohammed et al [8] investigated the photoconductivity of CdS thin film. They have found that the photo-current is proportional to the light intensity, thickness of the CdS film, and the substrate temperature.…”
Section: Introductionmentioning
confidence: 99%