Abstract:Nanocrystalline (nc)-Si/SiO2 multistacked floating gate have been prepared by electron beam evaporation of SiO(x) and SiO2 followed by thermal annealing. HRXTEM reveals that the density of multiply stacked nc-Si quantum dots reaches 9.1 x 10(11) cm(-2) with size of 2-3 nm. The periodicity effect of nc-Si/SiO2 multilayers on the charge storage characteristics of nc-Si floating gate is investigated carefully by using capacitance-voltage (C-V) and conductance-voltage (G-V) measurements at room temperature. It is … Show more
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