The performance improvement in pentacene organic thin film transistors by inserting C60/MoO3 ultrathin layers

Sun, Qinjun; Xu, Zheng; Zhao, Suling; Zhang, Fujun; Gao, Liyan; Wang, Yongsheng

doi:10.1016/j.synthmet.2010.08.007

Cited by 18 publications

(9 citation statements)

References 31 publications

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“…V t is generally thought to be related to the surface density of deeply trapped charges in the channel and contact region of a transistor . Deep traps, which are considered to be a few kT above the highest occupied molecular orbital, may occur due to structural defects and impurities .…”

Section: Resultsmentioning

confidence: 99%

Enhanced Performance of Self‐Assembled Monolayer Field‐Effect Transistors with Top‐Contact Geometry through Molecular Tailoring, Heated Assembly, and Thermal Annealing

Cernetic

Weidner

Baio

et al. 2015

Adv Funct Materials

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5376 wileyonlinelibrary.com traditional dielectrics and semiconductors in organic fi eld-effect transistors (OFETs). For example, the development of hybrid dielectrics, which are comprised of an ultrathin high-k metal oxide layer in conjunction with an SAM, enables low-voltage high-performance operation of organic transistors. [16][17][18] Self-assembled monolayer fi eld-effect transistors (SAMFETs) are a promising concept that uses rationally designed π-conjugated SAMs as the semiconductor of a transistor. [19][20][21][22][23] This concept works in principle because charge transport in an organic semiconductor-based FET occurs in the fi rst few monolayers closest to the dielectric. [ 24,25 ] SAMFETs are believed to have a broad appeal for organic semiconductor device applications due to their low-cost processing, reduced material quantity needed compared to tradition organic thin fi lm transistors, and ability to be used toward fl exible electronics and sensing applications. Signifi cant progress has been made through molecular design and novel device architecture to achieve a state-of-the-art hole mobility of around 10 −2 cm 2 V −1 s −1 . In order to achieve further performance enhancement, it is critical to overcome a fundamental challenge of effi cient contact between the metal source/drain electrodes and SAM semiconductor in SAMFET devices. Effi cient contacts between SAM semiconductor and electrodes may have been enabled by Smits et al. through under-etching the electrodes allowing the SAM to form underneath or, as shown by Schmaltz et al. , through utilizing a secondary SAM to elevate the electrodes to allow edge-on contact with the SAM semiconductor core. [ 20,21 ] However, these reports utilize cumbersome and complicated device architectures that may make SAMFETs less appealing toward commercialization. Furthermore, little work has been done to examine the impact of SAM processing on molecular packing density.Herein we demonstrate top-contact bottom-gate low-voltage p-type SAMFETs with a hybrid hafnium oxide (HfO 2 ) dielectric that operates under a bias of −3 V and has a charge carrier mobility of 10 −2 cm 2 V −1 s −1 . Charge carrier mobility of the SAMFET is increased by over two orders of magnitude through the designed functional SAM terminal group that enables effi cient charge injection between metal electrode and SAM

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Section: Resultsmentioning

confidence: 99%

Enhanced Performance of Self‐Assembled Monolayer Field‐Effect Transistors with Top‐Contact Geometry through Molecular Tailoring, Heated Assembly, and Thermal Annealing

Cernetic

Weidner

Baio

et al. 2015

Adv Funct Materials

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“…Among them, MoO3 and WO3 are reported to have promising electrical and optical properties for various applications such as solar cells, gas sensing (Z. Wei et al, 2018) smart windows application (Bin Li et al, 2019), display devices (Yeh et al, 2018), energy storage devices (Xu et al, 2019), electrodes (Yue et al, 2020), perovskite solar cells (B. S. Kim et al, 2015) and transistors (Sun et al, 2010), and also it is very common to use as sensing layer (Mohamed et al, 2019).…”

Section: Introductionmentioning

confidence: 99%

Phase modulation of MoO2 -MoO3 nanostructured thin films through W-Doping; utilizing UV photodetection and gas sensing applications

Zaki

BUYUKHARMAN²,

Basyooni

et al. 2022

Selçuk Üniversitesi Fen Fakültesi Fen Dergisi

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Gas sensing properties of metal oxide semiconductors draw high attention due to their simple fabricating methods, and low cost, chemical, and physical properties. In general, a high bandgap (>2 eV) can cause them to react in the UV region through the electromagnetic spectrum. Controlling the UV-photodetection and gas sensing ability of MoO2-MoO3 thin film through tungsten (W) doping of different ratios have been reported here. The preparation of these films was grown using a reactive magnetron sputtering system with different power sputtering of W-content. The bandgap calculations showed that the samples have a wide bandgap value. A small particle size of 8nm was observed through high W doping concentration which enhanced these materials toward high efficient gas sensing and UV photodetector applications. The UV optical sensor exhibits a high responsivity value of 2500A/W and an external quantum efficiency (EQE) value of 5x109 at 365nm. Also, an increase in the photocurrent gain value with increasing the W amount with a maximum value of 0.13, while a photocurrent of 1mA was observed. On the other hand, a fast-response/recovery time-based CO2 gas sensor of less than 10 sec was observed. The thin-film sensors showed well-defined adsorption and desorption kinetics in a CO2 environment with a p-type chemisorption behavior.

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“…Organic and metal interfaces mostly limit the performance of the device and field effect mobility is also decreased. In earlier reports it has been shown that the diffusion between the metal electrode and pentacene reduce the hole injection carrier at the interface which causes the increase in barrier height and contact resistance which effect the performance of the OTFTs [8][9][10][11]. It is shown that the contact between the S-D electrodes and the organic semiconductor can be improved by inserting transition metal oxide layer as carrier injection layers.…”

Section: Introductionmentioning

confidence: 99%

Top Contact Pentacene Based Organic Thin Film Transistor With Bi-layer TiO2Electrodes

Alam

Wang

Naka

et al. 2012

J. Photopol. Sci. Technol.

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We fabricated a Top contact Pentacene based Organic thin-film transistor (OTFTs) with bi-layer TiO 2 /Au electrodes. The performance of the devices after inserting TiO 2 layer between organic layer and Au electrode is highly improved. On comparing with pentacene based transistor with only Au electrode, the hole injection was largely enhanced and the highest field-effect mobility is increased from 0.37 cm 2 / (Vs) to 0.63 cm 2 / (Vs) in the device with bilayer TiO 2 /Au electrodes. We also measured the temperature dependence characteristics and surface morphology of both the devices. Both the devices showed strong temperature dependence. We observed that the barrier height is tremendously decreased after inserting a thin layer of TiO 2 between the organic layer and Au electrodes. The improved device performance was due to the decreased barrier height and decrease in the surface roughness of pentacene after inserting a suitable metal oxide layer between the pentacene and the Au electrodes. Our experimental results clearly show that the insertion of metal oxide between Au electrode and pentacene layer is an effective way to improve the performance of the pentacene based organic thin-film transistor (OTFTs).

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The performance improvement in pentacene organic thin film transistors by inserting C60/MoO3 ultrathin layers

Cited by 18 publications

References 31 publications

Enhanced Performance of Self‐Assembled Monolayer Field‐Effect Transistors with Top‐Contact Geometry through Molecular Tailoring, Heated Assembly, and Thermal Annealing

Enhanced Performance of Self‐Assembled Monolayer Field‐Effect Transistors with Top‐Contact Geometry through Molecular Tailoring, Heated Assembly, and Thermal Annealing

Phase modulation of MoO2 -MoO3 nanostructured thin films through W-Doping; utilizing UV photodetection and gas sensing applications

Top Contact Pentacene Based Organic Thin Film Transistor With Bi-layer TiO2Electrodes

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