2019
DOI: 10.1016/j.electacta.2019.06.100
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The partial substitution of Cd by La ions in CdWO4 nanocrystal for the efficiently enhanced electrochemical sensing of BPA

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Cited by 18 publications
(7 citation statements)
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“…The above analysis from FE-SEM images indicated that Cu-doping leads to a reduction in the CdWO 4 crystal growth. The results are consistent with reported studies on Eu, Fe, and La-doped CdWO 4 , Cd-doped ZnWO 4 , and Cu-doped NiWO 4 and CaWO 4 nanostructures. ,,,, Therefore, doping modifies the CdWO 4 lattice structure irrespective of the dopant type and possibly hinders its crystal growth through surface charge modification . The size reduction at a higher Cu content leads to high surface energy, which results in aggregation, as confirmed by the SEM images (Figure S1 and S2, Supporting Information).…”
Section: Resultssupporting
confidence: 89%
“…The above analysis from FE-SEM images indicated that Cu-doping leads to a reduction in the CdWO 4 crystal growth. The results are consistent with reported studies on Eu, Fe, and La-doped CdWO 4 , Cd-doped ZnWO 4 , and Cu-doped NiWO 4 and CaWO 4 nanostructures. ,,,, Therefore, doping modifies the CdWO 4 lattice structure irrespective of the dopant type and possibly hinders its crystal growth through surface charge modification . The size reduction at a higher Cu content leads to high surface energy, which results in aggregation, as confirmed by the SEM images (Figure S1 and S2, Supporting Information).…”
Section: Resultssupporting
confidence: 89%
“…According to the above analysis of the FE-SEM images, the reduction in CdWO 4 crystals is caused by Sn doping. The above findings are in line with studies that have been published on Cu-, Fe-, La-, and Eu-doped CdWO 4 and Cd-doped ZnWO 4 [ 1 , 28 , 32 , 33 , 34 , 35 , 36 ]. Therefore, doping changes the CdWO 4 lattice structure regardless of the type of dopant used, and it may even prevent crystal formation by changing the surface charge [ 37 ].…”
Section: Resultssupporting
confidence: 92%
“…The corresponding equivalent circuit (Figure S3) and electrochemical parameters (Table S5) deliver information that the series resistance R s stands for the resistance of the whole test system (ring-disk electrode and external wiring) . Simultaneously, shunt resistances R sh‑1 and R sh‑2 reflect the charge-transport resistances at the perovskite|ligand and ligand|MB electrolyte interfaces, respectively. It is clear that the fitted resistance of R sh‑2 is nearly 10 times larger than that of R sh‑1 in the EIS spectra of γ-CsPbI 3 NCs. The large resistance of R sh‑2 gives rise to a serious impediment to carrier transport from ligands to the MB electrolyte and further decreases the amount of photogenerated carriers reacting with MB, which may be the reason for their restricted photochemical property (e.g., photocatalytic degradation property).…”
Section: Resultsmentioning
confidence: 99%