Abstract:In recent years, further improvement in planarization at Tungsten (W) Chemical Mechanical Planarization (CMP) is becoming increasingly important at advanced technology nodes.A combination of hydrogen peroxide and metal catalyst has mainly been used as the W slurry components. On the other hand, these components which take on the character of high etching for Tungsten film is unfitted for advanced planarization. This study sought alternative oxidant source for W slurry with lower etching effect which could repl… Show more
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