The origins of energy gap bowings in substitutional semiconductor alloys

Microstructure and optical studies of electron beam evaporated ZnSe1−xTex nanocrystalline thin films

“…15 the dependence of the fundamental energy gap on composition is not linear (bowing behavior). It has been assumed that the bowing behavior in semiconductor alloys like ZnSe 1−x Te x is mainly attributed to the disorder effects existing in conduction-band and valance-band edges [50][51][52]. At room temperature, the bowing behavior of the fundamental energy gap as a function of composition is described by the following equation: E g (300 K) = 2.575 − 0.359X − 0.017X 2 (11) The values of the E g calculated from Eq.…”

Facile synthesis of composition-tuned ZnO/Zn x Cd1-x Se nanowires for photovoltaic applications

“…The least square fit yields b  = 0.55 eV, which is slightly larger than that of bulk (0.41 ~ 0.48 eV), but lower than that obtained by Yoon (0.79 eV) [18,31,35]. As we know, bowing parameter b in a mixed crystal of A x B 1- x C reflects their miscibility between AC and BC [30,36,37]. From this point of view, the lower b value in our work demonstrates that the ternary alloys annealed under 350°C have relatively uniform element distribution.…”

Influence of composition and temperature on the band gap of glassy melts As2S3-Sb2S3

“…Theoretical calculations of the zone structure in the semiconductor solid solution carried out using the dielectric model and the pseudo potential method showed [16,17] that the disorder leads to the appear ance of potential fluctuations proportional to the dif ference in electric negativities of the components' cat ions and anions. These fluctuations themselves are connected with the difference in the ion energy gaps of the compounds forming the melt.…”