The Origin of Quantum Effects in Low‐Dimensional Thermoelectric Materials

Hung, Nguyen Tuan; Saito, Riichiro

doi:10.1002/qute.202000115

Cited by 18 publications

(14 citation statements)

References 87 publications

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“…At the same time, the LB generally gives a large σ as reported in the cases of graphene [21] and three-dimensional Dirac Cd 3 As 2 [22]. Furthermore, the vHSs also enhance the PF of the lowdimensional materials due to the quantum confinement effect [8][9][10].…”

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confidence: 60%

“…Therefore, finding materials with both large S and high σ is a bottleneck to improve the TE power factor, PF = S 2 σ. In this regard, many studies have been focusing on the PF enhancement for the semiconductors through, for example, band convergence [5,6] and quantum confinement [7][8][9][10]. However, the PF enhancement in the metals or semimetals remains a * nguyen@flex.phys.tohoku.ac.jp long-standing problem.…”

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confidence: 99%

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Enhanced thermoelectric performance by van Hove singularities in the density of states of type-II nodal-line semimetals

Hung,

Adhidewata,

Nugraha

et al. 2021

Preprint

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The effects of the unique band structure of a topological type-II nodal-line semimetal (NLS) on its thermoelectric (TE) transport properties are investigated through a combination of semi-analytical and first-principles methods with Mg3Bi2 as example material. The density of states (DOS) in such a type-II NLS possesses two van Hove singularities near the energy of the nodal line that leads to a large S value compared to the normal metals. Combined with the linear band at the nodal line that gives high electrical conductivity σ, the type-II NLS can exhibit a relatively high TE power factor (PF = S 2 σ) at the nodal line. In particular, we find PF ∼ 60 µW/cmK 2 at 300 K for the n-type Mg3Bi2 by considering the electron-phonon scattering, in which the relaxation time τ of carriers can be expressed as τ ∝ DOS −1 for the type-II NLS. Furthermore, we optimize parameters for the TE power factor of type-II NLSs in general by adopting the two-band model with the DOS-dependent relaxation time approximation. Our results suggest the type-II NLSs as a potential class of highperformance TE materials among metals and semimetals, which are traditionally considered not good TE materials compared to semiconductors.

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confidence: 99%

Enhanced thermoelectric performance by van Hove singularities in the density of states of type-II nodal-line semimetals

Hung,

Adhidewata,

Nugraha

et al. 2021

Preprint

Self Cite

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“…These optical modes are effortlessly thermally activated at 300 K and seriously hinder thermal transport as a result of phonon-phonon scattering, and thus, a low κ l is gained for monolayer GeP 3 . Nanostructure is one of the important ways to enhance ZT value by hindering phonon transport [3][4][5]. The phonon boundary scattering would greatly depress the κι as long as the length of the nanostructure is as short as the phonon mean free path (MFP).…”

Section: Resultsmentioning

confidence: 99%

“…The Mexican-hat-shaped dispersion and the band degeneracy of valence bands result in a high p-type power factor. The low fre- Nanostructure is one of the important ways to enhance ZT value by hindering phonon transport [3][4][5]. The phonon boundary scattering would greatly depress the κ ι as long as the length of the nanostructure is as short as the phonon mean free path (MFP).…”

Section: Discussionmentioning

confidence: 99%

“…These TE coefficients are connected by the carrier concentration and will lead to a maximum ZT value at a proper carrier concentration. In the past few years, numerous efforts have suggested that the TE performance of low-dimensional systems could be enhanced compared to their bulk counterparts because of the quantum confinement effect [3][4][5].…”

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confidence: 99%

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Excellent Room-Temperature Thermoelectricity of 2D GeP3: Mexican-Hat-Shaped Band Dispersion and Ultralow Lattice Thermal Conductivity

Gao

2021

Molecules

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Although some atomically thin 2D semiconductors have been found to possess good thermoelectric performance due to the quantum confinement effect, most of their behaviors occur at a higher temperature. Searching for promising thermoelectric materials at room temperature is meaningful and challenging. Inspired by the finding of moderate band gap and high carrier mobility in monolayer GeP3, we investigated the thermoelectric properties by using semi-classical Boltzmann transport theory and first-principles calculations. The results show that the room-temperature lattice thermal conductivity of monolayer GeP3 is only 0.43 Wm−1K−1 because of the low group velocity and the strong anharmonic phonon scattering resulting from the disordered phonon vibrations with out-of-plane and in-plane directions. Simultaneously, the Mexican-hat-shaped dispersion and the orbital degeneracy of the valence bands result in a large p-type power factor. Combining this superior power factor with the ultralow lattice thermal conductivity, a high p-type thermoelectric figure of merit of 3.33 is achieved with a moderate carrier concentration at 300 K. The present work highlights the potential applications of 2D GeP3 as an excellent room-temperature thermoelectric material.

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Responsive materials nanoarchitectonics at interfaces

Ariga

2024

Responsive Materials

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Advanced materials could perform functions in response to external stimuli. These are responsive materials. In order for us to develop advanced functional systems with a good responsive nature, we need to create a methodology that goes one step further. It is the artificial architecture of functional material systems based on the knowledge of nanotechnology. The task will be fulfilled by the new concept of nanoarchitectonics. Nanoarchitectonics integrates nanotechnology with various material sciences, basic chemistry, microfabrication techniques, and biological processes to architect functional material systems from atomic, molecular, and nanomaterial units. This review will deal with the nanoarchitectonics of responsive materials related with phenomena at interfaces. In order to demonstrate the effectiveness of responsive materials nanoarchitectonics at interfaces for functional systems of various sizes, this review article is organized by size for various functional systems. Specifically, this review has grouped them into (i) molecular level response, (ii) nanodevice level response, (iii) material level response, and (iv) living cell level response. If the social demand for these materials is fully recognized, such development is expected to efficiently progress. This review article would play a role in stimulating such development.

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The Origin of Quantum Effects in Low‐Dimensional Thermoelectric Materials

Cited by 18 publications

References 87 publications

Enhanced thermoelectric performance by van Hove singularities in the density of states of type-II nodal-line semimetals

Enhanced thermoelectric performance by van Hove singularities in the density of states of type-II nodal-line semimetals

Excellent Room-Temperature Thermoelectricity of 2D GeP3: Mexican-Hat-Shaped Band Dispersion and Ultralow Lattice Thermal Conductivity

Responsive materials nanoarchitectonics at interfaces

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