The origin of n-type conductivity in undoped In2O3

Tomita, Takumi; Yamashita, Kazuya; Hayafuji, Yoshinori; Adachi, Hirohiko

doi:10.1063/1.2001741

Cited by 104 publications

(92 citation statements)

References 19 publications

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“…The In 3d 5/2 peak shows an additional sub-peak at 443.5 eV, which is attributed to In-In metal bonds [25]. The latter suggests that oxygen deficient sites or interstitial In atoms are formed in the film, which may generate free carriers [26,27]. Nevertheless, the segregation of In metal at grain boundaries or interfaces such as those present in GaN/InGaN hetero-structures must not be neglected [28,29].…”

Section: Resultsmentioning

confidence: 99%

Atomic layer deposition of highly conductive indium oxide using a liquid precursor and water oxidant

Maeng

Choi

Park

et al. 2015

Ceramics International

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Section: Resultsmentioning

confidence: 99%

Atomic layer deposition of highly conductive indium oxide using a liquid precursor and water oxidant

Maeng

Choi

Park

et al. 2015

Ceramics International

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“…XPS oxygen 1s analysis of the O-bonding states in the films (SI Appendix, Fig. S3) indicates three different oxygen environments: M-O-M lattice species at 529.9 ± 0.1 eV, bulk and surface metal hydroxide (M-OH) species at 531.3 ± 0.1 eV, and weakly bound adsorbate species (e.g., H 2 O or CO 2 ) at 532.2 ± 0.1 eV (31)(32)(33) (Fig. 1 B and B, Insets) indicate that the former are more crystalline than the latter, which is in agreement with the XRD data.…”

Section: Significancementioning

confidence: 99%

Spray-combustion synthesis: Efficient solution route to high-performance oxide transistors

Smith²,

Zhou

et al. 2015

Proc. Natl. Acad. Sci. U.S.A.

178

186

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Metal-oxide (MO) semiconductors have emerged as enabling materials for next generation thin-film electronics owing to their high carrier mobilities, even in the amorphous state, large-area uniformity, low cost, and optical transparency, which are applicable to flat-panel displays, flexible circuitry, and photovoltaic cells. Impressive progress in solution-processed MO electronics has been achieved using methodologies such as sol gel, deep-UV irradiation, preformed nanostructures, and combustion synthesis. Nevertheless, because of incomplete lattice condensation and film densification, high-quality solution-processed MO films having technologically relevant thicknesses achievable in a single step have yet to be shown. Here, we report a low-temperature, thickness-controlled coating process to create high-performance, solution-processed MO electronics: spray-combustion synthesis (SCS). We also report for the first time, to our knowledge, indium-gallium-zinc-oxide (IGZO) transistors having densification, nanoporosity, electron mobility, trap densities, bias stability, and film transport approaching those of sputtered films and compatible with conventional fabrication (FAB) operations. etal-oxide (MO) semiconductors, especially in amorphous phases, represent an appealing materials family for next generation electronics owing to their high carrier mobilities, good environmental/thermal stability, mechanical flexibility, and excellent optical transparency (1-3). MO films complement organic semiconductors (4, 5), carbon/oxide nanomaterials (6), and flexible silicon (7, 8) for enabling new technologies, such as flexible displays and printed sensors. For fabricating high-performance electronics with acceptable fidelity, conventional processes require capital-intensive physical/chemical vapor deposition techniques. Capitalizing on the solubility of MO precursors in common solvents, solution methods have been used to fabricate semiconducting MO layers for thin-film transistors (TFTs). However, the fabrication process and field-effect mobilities of these TFTs are not competitive with the corresponding vapor-deposited (e.g., sputtered) devices (9), and developing routes to solution-derived MO TFTs with technologically relevant thicknesses and performance comparable to state of the art vapor-deposited devices is a critical milestone for MO electronics evolution.Sol-gel techniques are used extensively for MO film growth, including films for high-performance TFTs (10-13). However, the required sol-gel condensation, densification, and impurity removal steps typically require >400-500°C processing temperatures, which are incompatible with inexpensive glasses and typical flexible plastic substrates (14). Progress toward significantly reducing the processing temperatures of sol gel-derived MO films has afforded excellent TFT mobilities; however, achieving both reproducible high-performance and stable device operation remains an unsolved issue for Ga-containing materials (15). Sol-gel on-a-chip for indium-zinc-oxide (3) and deep-UV ...

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“…The prototype n-type TCO is Sn-doped In 2 O 3 (ITO), which has been the subject of intense study both experimentally [2][3][4][5][6][7][8][9][10] and theoretically [11][12][13][14][15][16][17][18]. Other examples of electron conducting TCOs include Al-doped ZnO, Ga-doped ZnO and F-doped SnO 2 .…”

Section: Introductionmentioning

confidence: 99%

Multi-component transparent conducting oxides: progress in materials modelling

Walsh

Silva

Wei

2011

J. Phys.: Condens. Matter

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Transparent conducting oxides (TCOs) play an essential role in modern optoelectronic devices through their combination of electrical conductivity and optical transparency. We review recent progress in our understanding of multi-component TCOs formed from solid-solutions of ZnO, In2O3, Ga2O3 and Al2O3, with a particular emphasis on the contributions of materials modelling, primarily based on Density Functional Theory. In particular, we highlight three major results from our work: (i) the fundamental principles governing the crystal structures of multi-component oxide structures including (In2O3)(ZnO)n, named IZO, and (In2O3)m(Ga2O3) l (ZnO)n, named IGZO; (ii) the relationship between elemental composition and optical and electrical behaviour, including valence band alignments; (iii) the high-performance of amorphous oxide semiconductors. From these advances, the challenge of the rational design of novel electroceramic materials is discussed.PACS numbers: 71.15.Mb

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The origin of n-type conductivity in undoped In2O3

Cited by 104 publications

References 19 publications

Atomic layer deposition of highly conductive indium oxide using a liquid precursor and water oxidant

Atomic layer deposition of highly conductive indium oxide using a liquid precursor and water oxidant

Spray-combustion synthesis: Efficient solution route to high-performance oxide transistors

Multi-component transparent conducting oxides: progress in materials modelling

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