The Optimized Thickness of Silver Doping on CdS/CdSe for Quantum Dot-Sensitized Solar Cell

Abstract

Overall, CdSe:Ag + quantum dots were prepared by the successive ionic layer absorption and reaction method using two solutions: mixing molar concentrations of 0.003 mM AgNO 3 and a Cd(CH 3 COO) 2 ·2H 2 O anion to make solution 1 and 2.27 g Se powder and 0.6 M Na 2 SO 3 were dissolved in 100 ml deionized water, solution 2. The FTO was coated with TiO 2 nanoparticles and then was dipped in both solutions, which created a FTO/TiO 2 /CdSe:Ag + photoanode with a thickness of 1 layer to 4 layers. The layers of the CdSe:Ag + film show an effect on the morphology, crystalline structure, optical properties, and photovoltaic through optical and photovoltaic measurements. Finally, the performance of the device based on a FTO/TiO 2 /CdSe:Ag + photoanode with the different thickness increased significantly to exactly 3.96%. Moreover, in the pattern of an explanation of the optical and photovoltaic properties of materials, we use Tauc's theory to determine the band gap, the conduction band, and the valence band.