2020
DOI: 10.1063/5.0015289
|View full text |Cite
|
Sign up to set email alerts
|

The optical signature of few-layer ReSe2

Abstract: Optical properties of thin layers of rhenium diselenide (ReSe 2 ) with thickness ranging from mono-(1 ML) to nona-layer (9 MLs) are demonstrated. The photoluminescence (PL) and Raman scattering were measured at low (T =5 K) and room (T =300 K) temperature, respectively. The PL spectra of ReSe 2 layers display two well-resolved emission lines, which blueshift by about 60 meV when the layer thickness decreases from 9 MLs to a bilayer. A rich structure of the observed low-energy Raman scattering modes can be expl… Show more

Help me understand this report
View preprint versions

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
2

Citation Types

2
29
0

Year Published

2020
2020
2024
2024

Publication Types

Select...
7
2

Relationship

3
6

Authors

Journals

citations
Cited by 22 publications
(31 citation statements)
references
References 30 publications
2
29
0
Order By: Relevance
“…In terms of their crystal structures, these materials are characterized by a high in-plane symmetry. On the other hand, there is a group of materials with a low in-plane symmetry, which includes, e.g., black phosphorus (BP) [6][7][8], or Re-based dichalcogenides (ReS 2 and ReSe 2 [9,10]. Among these anisotropic materials, a new group of emerging vdW semiconductors, i.e., group-IV monochalcogenides MX (where M = Ge, Sn, or Pb and X = S, Se, or Te), has attracted increasing attention due to their anisotropic optical properties.…”
Section: Introductionmentioning
confidence: 99%
“…In terms of their crystal structures, these materials are characterized by a high in-plane symmetry. On the other hand, there is a group of materials with a low in-plane symmetry, which includes, e.g., black phosphorus (BP) [6][7][8], or Re-based dichalcogenides (ReS 2 and ReSe 2 [9,10]. Among these anisotropic materials, a new group of emerging vdW semiconductors, i.e., group-IV monochalcogenides MX (where M = Ge, Sn, or Pb and X = S, Se, or Te), has attracted increasing attention due to their anisotropic optical properties.…”
Section: Introductionmentioning
confidence: 99%
“…Ł. Kipczak and collaborators studied the photoluminescence (PL) and Raman scattering properties of ultrathin ReSe 2 -whose thicknesses ranged from nine to one monolayer-at 5 K and at room temperature, 38 paving the way for the identification of few-layer ReSe 2 samples by optical means. The PL spectra of ReSe 2 layers display two well-resolved emission lines, which blue-shift by about 120 meV when the layer thickness decreases from nine monolayers to a monolayer, confirming a direct optical transition.…”
Section: Layered and 2d Materials With An In-plane Intrinsic Structur...mentioning
confidence: 99%
“…Their energy difference can serve as a convenient and reliable tool to determine the thickness of ReSe 2 flakes in the fewlayer limit. 38…”
Section: Layered and 2d Materials With An In-plane Intrinsic Structur...mentioning
confidence: 99%
“…Raman scattering (RS) and photoluminescence (PL) spectroscopies are extensively used experimental techniques to characterize layered materials. Particularly, they can be used to determine the thickness of each S-TMD thin layer due to the energy dependence of phonon vibrations [24][25][26][27][28][29][30][31] as well as to the direct-indirect band-gap transformation [1][2][3][4] .…”
Section: Introductionmentioning
confidence: 99%