The Optical Properties of Bismuth Telluride

Austin, I. G.

doi:10.1088/0370-1328/72/4/309

Cited by 106 publications

(58 citation statements)

References 17 publications

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“…1.The structures can be detected as Bi and Te (Se) layers stacked along the c-axis and containing five atoms per unit cell (two Bi atoms and three Te or Se atoms) 10 . Increase both theoretical and experimental investigation on electronic structure and optical properties of Bi 2 Te 3-x Se x (x=0,1,2 and 3) exhibit a direct band gap 13 and The refractive index of the Bismuth Telluride is higher than any value previously reported for a semiconductor 14 . In this work the principle of our inspection is concentrated on predicting the structural, electronic and optical properties of Bi 2 Te 3-x Se x alloys with a number of concentrations (x) (x=0,1,2 and 3).…”

Section: Introductionmentioning

confidence: 85%

Improved Electronic Structure and Optical Performance of Bi2Te3-xSex From First-principle Calculations Within TB-mBJ Exchange Potential

et al. 2017

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Using the first-principle calculations of density functional theory within the (FP-LAPW) method, we have investigated the structural, electronic and optical properties of Bi 2 Te 3-x Se x alloys with compositions x = 0, 1, 2 and 3 of Se. The generalized gradient approximation functional of Wu and Cohen (GGA-PBE) is used to calculate ground state structural parameters of Bi 2 Te 3-x Se x , which are in good agreement with theoretical and experimental data. The electronic band structures and optical constants have been improved with Tran-Blaha modified Becker-Johnson (TB-mBJ) parameterization scheme. Also, we have analyzed in detail the performance of dielectric function, refractive index, reflectivity and optical conductivity of these alloys. Our results show that Bi 2 Te 3-x Se x alloys are promising candidates for optoelectronic applications especially in the Infrared and visible fields. Bi 2 Te 3-x Se x materials have a direct band gap and can be tuned from 0.1706 eV to 0.7819 eV by varying In composition so emission was tunable from 1.58 to 7.26 micrometers (infrared field), in addition for their direct band gap and in view of their attractive optical properties such conductivity, absorption and reflectivity these materials is considered as promising materials for optoelectronic applications.

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Section: Introductionmentioning

confidence: 85%

Improved Electronic Structure and Optical Performance of Bi2Te3-xSex From First-principle Calculations Within TB-mBJ Exchange Potential

et al. 2017

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“…2) and the experimental value of ε, the carrier concentrations were determined for different [17] 80 [18] 50 [18] Single crystal E ⊥ c (Literature value) 85 [17] 85 [19] Isotropic ECD film (this work) 63 - [17] Single crystal E ⊥ c (Literature value) 360 ± 50 [20] 290 [17] Isotropic ECD film (this work) 218 -compositions of Bi 2 Te 3 and all the values are comprised between 1.5 × 10 20 cm −3 and 9 × 10 20 cm −3 and agree with scattered literature data. [7] Moreover, the data are validated by additional measurements from Hall Effect measurements (HEM), except for the rich-Bi samples, where strong relative discrepancy is found between HEM and this method, respectively 5×10 20 and 1.5×10 20 .…”

Section: Determination Of the Carrier Concentrationmentioning

confidence: 99%

Characterizations of bismuth telluride films from Mott‐Schottky plot and spectroscopic ellipsometry

Zimmer

Stein

Johann

et al. 2008

Surface & Interface Analysis

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Capacitance measurement results (via the so-called Mott-Schottky plot) and Infrared spectroscopic ellipsometry (IRSE) analysis have been carried out in order to study semiconducting properties of electroplated thin films of bismuth telluride (Bi 2 Te 3 ) without any electrical contact. Electrochemical impedance measurements at 10 kHz exhibited that films characterized n-type semiconductors, depending upon potentials applied above and below the flat-band potential. By IRSE study, the energy band gap E g was found to be about 0.11 eV independent of the film composition and the electrical resistivity of about 30 µ .m. By combining IRSE and capacitance measurement results, dielectric constant ε and carrier concentration of the samples were calculated without any assumptions.

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“…Comme Bi 2 Te 3 est généralement considéré comme un semi-conducteur à gap indirect [11,12], le coefficient d'absorption (=4 k/ ), l'énergie de bande interdite E g (gap) et l'énergie E sont liés par la relation E = A(E E g ) 2 où A est une constante. Le gap peut ainsi être évalué en extrapolant la portion linéaire du graphique ( E) 1/2 en fonction de l'énergie E (figure 5).…”

Section: Détermination Du Gap Du Semi-conducteurunclassified

“…Le gap peut ainsi être évalué en extrapolant la portion linéaire du graphique ( E) 1/2 en fonction de l'énergie E (figure 5). La valeur obtenue de 0,3 eV est en accord avec celles de la littérature (0,11 0,3 eV) [11][12][13] pour des conditions de synthèse différentes. A terme, des mesures dans l'IR permettront d'affiner cette valeur.…”

Section: Détermination Du Gap Du Semi-conducteurunclassified

Caractérisation par ellipsométrie spectroscopique de films minces de tellurure de bismuth obtenus par voie électrochimique

Zimmer¹,

Stein²,

Boulanger³

et al. 2004

J. Phys. IV France

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Résumé. Des films de tellurure de bismuth (Bi 2 Te 3 ) d'épaisseur proche de 1 m ont été développés par voie électrochimique. Leurs indices optiques ont été déterminés par ellipsométrie spectroscopique (SE). Le domaine spectral des indices optiques s'étend de 400 nm à 1300 nm. L'ellipsométrie spectroscopique à angle d'incidence variable (VASE) a été utilisée pour corréler les données SE. Cette partie a été complétée par des analyses par microscopie à force atomique (AFM) qui ont permis de déterminer la rugosité des films. A partir de ces résultats et en associant l'absorption fondamentale des films de Bi 2 Te 3 à une transition indirecte, l'énergie de bande interdite a été évaluée à 0,3 eV. Par ailleurs des mesures associant ellipsométrie spectroscopique à temps réel et électrochimie ont pu être réalisées. Ainsi les premiers instants de croissance ont été observés.

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The Optical Properties of Bismuth Telluride

Cited by 106 publications

References 17 publications

Improved Electronic Structure and Optical Performance of Bi2Te3-xSex From First-principle Calculations Within TB-mBJ Exchange Potential

Improved Electronic Structure and Optical Performance of Bi2Te3-xSex From First-principle Calculations Within TB-mBJ Exchange Potential

Characterizations of bismuth telluride films from Mott‐Schottky plot and spectroscopic ellipsometry

Caractérisation par ellipsométrie spectroscopique de films minces de tellurure de bismuth obtenus par voie électrochimique

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