The optical and electrophysical properties of Al-ZnO thin films

Ignatieva, Irina O.; Volkova, Maria G.; Gulyaeva, Irina A.; Starnikova, A.P.; Petrov, Victor; Bayan, Е. М.

doi:10.1016/j.matpr.2021.09.028

Cited by 3 publications

(4 citation statements)

References 20 publications

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“…To obtain pure zinc oxide and Al-doped ZnO, synthesis from inorganic precursors was implemented; zinc acetate dihydrate Zn(CH 3 COO) 2 ∙2H 2 O (analytical grade, A.G.), nonahydrate aluminum nitrate Al(NO 3 ) 3 ∙9H 2 O (A.G.), and abietic acid (A.G.) were used. Synthesis was carried out according to the previously described method [ 39 ]. At the first stage, an intermediate product was obtained in the melt—organic salts of aluminum and zinc.…”

Section: Methodsmentioning

confidence: 99%

“…One of the simple, inexpensive and promising films synthesis methods is solid-phase pyrolysis, which allows the obtention of films of various compositions: ZnO-SnO 2 [ 35 , 36 , 37 ], Co 3 O 4 -ZnO [ 38 ]. By this method, using heat treatment at 600 °C, transparent ZnO films containing 1 and 3% Al 3+ were obtained [ 39 ]; they had a transmittance of more than 90%. It was also found that with an increase in the calcination temperature from 600 to 700 °C, the band gap decreases from 3.32 to 3.28 eV, respectively [ 40 ].…”

Section: Introductionmentioning

confidence: 99%

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Polycrystalline Transparent Al-Doped ZnO Thin Films for Photosensitivity and Optoelectronic Applications

et al. 2023

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Thin nanocrystalline transparent Al-doped ZnO (1–10 at.% Al) films were synthesized by solid-phase pyrolysis at 700 °C. Synthesized Al-doped ZnO films were investigated by X-ray diffraction (XRD), scanning and transmission electron microscopy (SEM, TEM). All obtained materials were crystallized into the wurtzite structure, which was confirmed by XRD. The material crystallinity decreases with the introduction of aluminum. SEM and TEM showed that the films are continuous and have a uniform distribution of nanoparticles with an average size of 15–20 nm. TEM confirmed the production of Al-doped ZnO films. The transmittance of Al-doped ZnO films in the range of 400–1000 nm is more than 94%. The introduction of 1% Al into ZnO leads to a narrowing of the band gap compared to ZnO to a minimum value of 3.26 eV and a sharp decrease in the response time to the radiation exposure with a wavelength of 400 nm. An increase in aluminum concentration leads to a slight increase in the band gap, which is associated with the Burstein–Moss effect. The minimum response time (8 s) was shown for film containing 10% Al, which is explained by the shortest average lifetime of charge carriers (4 s).

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Polycrystalline Transparent Al-Doped ZnO Thin Films for Photosensitivity and Optoelectronic Applications

et al. 2023

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“…4-dioxane as an organic solvent were used as precursors. Synthesis was carried out according to the previously described method [34]. The synthesis of multifunctional Al-ZnO films consists of two stages.…”

Section: Introductionmentioning

confidence: 99%

Effect of calcination temperature on phase composition and optical properties of Al-ZnO nanocrystalline films

et al. 2023

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Nanocrystalline Al-ZnO films were successfully synthesized by thermal decomposition method. The method includes two stages: synthesis from the melt of organic salts and the films production. The effect of the calcination temperature varying from 600 to 800 °C on the crystallite sizes, phase composition and optical properties of the synthesized films was also investigated. X-ray diffraction (XRD) showed the formation of a hexagonal wurtzite crystal structure with a distorted lattice upon the introduction of Al3+ ions. Based on calculations and scanning electron microscopy (SEM) images, the crystallites size increased from 18 to 28 nm with the calcination temperature increasing. Optical properties of Al-ZnO films were studied by optical transmission spectra. An increase in the calcination temperature leads to a decrease in the ZnO band gap. It was shown that the proposed method makes it possible to obtain optically transparent Al-ZnO films consisting of nanocrystallites. By varying the calcination temperature, the optical properties can be adjusted, which will significantly expand the application range of these materials.

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“…The combination of relative low cost and unique physicochemical properties makes zinc-oxide-based materials very attractive for research and various applications [ 2 ]. For example, ZnO films with the addition of aluminum oxide are optically transparent in the visible light range, which allows one to use these films in various optical devices [ 3 , 4 ]. The creation of composites based on ZnO and a small amount of other oxide leads to a change in the band gap of the material, which makes it possible to adjust the electrophysical properties of synthesized materials for use in optical, energy storage, and photovoltaic devices.…”

Section: Introductionmentioning

confidence: 99%

Nanocomposite Co3O4-ZnO Thin Films for Photoconductivity Sensors

Petrov

Sysoev

Ignatieva

et al. 2023

Sensors

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Thin nanocomposite films based on zinc oxide (ZnO) added with cobalt oxide (Co3O4) were synthesized by solid-phase pyrolysis. According to XRD, the films consist of a ZnO wurtzite phase and a cubic structure of Co3O4 spinel. The crystallite sizes in the films increased from 18 nm to 24 nm with growing annealing temperature and Co3O4 concentration. Optical and X-ray photoelectron spectroscopy data revealed that enhancing the Co3O4 concentration leads to a change in the optical absorption spectrum and the appearance of allowed transitions in the material. Electrophysical measurements showed that Co3O4-ZnO films have a resistivity up to 3 × 104 Ohm∙cm and a semiconductor conductivity close to intrinsic. With advancing the Co3O4 concentration, the mobility of the charge carriers was found to increase by almost four times. The photosensors based on the 10Co-90Zn film exhibited a maximum normalized photoresponse when exposed to radiation with wavelengths of 400 nm and 660 nm. It was found that the same film has a minimum response time of ca. 26.2 ms upon exposure to radiation of 660 nm wavelength. The photosensors based on the 3Co-97Zn film have a minimum response time of ca. 58.3 ms versus the radiation of 400 nm wavelength. Thus, the Co3O4 content was found to be an effective impurity to tune the photosensitivity of radiation sensors based on Co3O4-ZnO films in the wavelength range of 400–660 nm.

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The optical and electrophysical properties of Al-ZnO thin films

Cited by 3 publications

References 20 publications

Polycrystalline Transparent Al-Doped ZnO Thin Films for Photosensitivity and Optoelectronic Applications

Polycrystalline Transparent Al-Doped ZnO Thin Films for Photosensitivity and Optoelectronic Applications

Effect of calcination temperature on phase composition and optical properties of Al-ZnO nanocrystalline films

Nanocomposite Co3O4-ZnO Thin Films for Photoconductivity Sensors

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