The On-Chip Lateral Super-Junction IGBT in Integrated High-Voltage Low-Power Converters

Rindfleisch, Christoph; Tee, Elizabeth Kho Ching; Holke, Alexander

doi:10.23919/ispsd50666.2021.9452214

Cited by 7 publications

(2 citation statements)

References 4 publications

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“…14 the PCB implementation with a size comparison to a 1-cent coin. The IC has an active area of 12 mm 2 without the optional internal buffer capacitor C b ON-resistance. If available, a further size reduction of M2 and M3 could be achieved with super-junction IGBTs as suggested in [20].…”

Section: Resultsmentioning

confidence: 99%

A 110/230 V AC and 15–400 V DC 0.3 W Power-Supply IC With Integrated Active Zero-Crossing Buffer

Rindfleisch

Wicht

2022

IEEE J. Solid-State Circuits

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This work presents an offline power supply with fully integrated power stage in 0.18 µm high-voltage (HV) CMOS silicon on insulator (SOI). It supports both ac-dc and dc-dc conversion from 15-400 V input down to 3.3-10 V output and is optimized for applications below 300 mW such as the Internet of Things (IoT), smart home, and e-mobility. An active zerocrossing buffer enables on-chip integration of the HV buffer capacitor. Below 150 V, constant ON-time control is based on voltage intervals, sensed by ten HV threshold-detection circuits. Above 150 V, the converter operates in the resonant mode. It achieves a superior power density of 458 mW/cm 3 and 84% peak efficiency.

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Section: Resultsmentioning

confidence: 99%

A 110/230 V AC and 15–400 V DC 0.3 W Power-Supply IC With Integrated Active Zero-Crossing Buffer

Rindfleisch

Wicht

2022

IEEE J. Solid-State Circuits

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“…The demand for high-efficiency and high-voltage power semiconductors is rapidly increasing due to environmental regulations and energy-saving policies in various fields such as industrial equipment and the automobile market, etc. [1][2][3] For this reason, an insulated-gate bipolar transistor (IGBT) has been studied for its high conductivity and high breakdown voltage (BV) as a typical power semiconductor that uses both electrons and holes as carriers. [4][5][6] Recently, interest in wide bandgap semiconductors in high voltage applications is increasing, and many studies on IGBT using SiC are in progress.…”

Section: Introductionmentioning

confidence: 99%

Application of SiGe layer for reinforcing conductivity modulation in trench insulated gate bipolar transistor

Yoon¹,

Kim²

2022

Jpn. J. Appl. Phys.

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In this work, an investigation for inserting a SiGe layer in an insulated-gate bipolar transistor (IGBT) has been performed to analyze the relation between on-state property and breakdown voltage (BV) with the help of technology computer-aided design simulation. For a carrier storage (CS) IGBT, which is widely studied for enhancing conductivity modulation by increasing hole density, the BV decreases by increased conductivity in the CS layer. However, by using the SiGe layer instead of the CS layer, the on-state property is improved with lower BV reduction than a CS IGBT due to the absence of impurity doping. Finally, an optimization for a Ge mole fraction is performed. Based on the results, it is found that the SiGe with 0.3 mole fraction shows the best performance because over 0.3 Ge mole fraction, the excessive energy band bending induced by over-accumulated holes makes low carrier velocity in the n-drift layer.

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High-Voltage DC–DC Converters

Rindfleisch,

Wicht

2024

Chip-Scale Power Supplies for DC-Link and Grid Applications

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The On-Chip Lateral Super-Junction IGBT in Integrated High-Voltage Low-Power Converters

Cited by 7 publications

References 4 publications

A 110/230 V AC and 15–400 V DC 0.3 W Power-Supply IC With Integrated Active Zero-Crossing Buffer

A 110/230 V AC and 15–400 V DC 0.3 W Power-Supply IC With Integrated Active Zero-Crossing Buffer

Application of SiGe layer for reinforcing conductivity modulation in trench insulated gate bipolar transistor

High-Voltage DC–DC Converters

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