The Ohmic Contact of 4H-SiC Power Devices by Pulse Laser Annealing and Rapid Thermal Annealing

Zhou, Zhongjun; Zhang, Zhen Zhong; He, Wei; Hao, Jian; Sun, Jing; Zhang, Feng; Zheng, Ze Dong

doi:10.4028/www.scientific.net/msf.1004.712

Cited by 4 publications

(1 citation statement)

References 20 publications

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“…For an electrode material to form an Ohmic contact, it is closely related to the substrate material. A vast majority of the works reported were based on n-type 4H-SiC, as opposed to other substrates, such as 6H-SiC, semi-insulating 4H-SiC [13], and only Ni and Ti-based electrode materials have been reported [7,14,15]. Although different types of power device architectures can be fabricated to investigate the effect of laser annealing on the performance of ohmic contact, only simple device structures were used such as Schottky barrier diode and junction barrier Schottky diode [16,17].…”

Section: Research Direction and Progressmentioning

confidence: 99%

Fabrication of Ohmic Contact on N-Type SiC by Laser Annealed Process: A Review

Zou

et al. 2023

Crystals

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In recent years, because of stringent needs in the fabrication of silicon carbide (SiC) power devices, laser annealing has been introduced to achieve local ohmic contact. In this paper, the laser annealing research for the ohmic contact process of SiC power devices is reviewed, which is mainly divided into four aspects: laser process mechanism, ohmic contact electrode materials, and substrate materials. The effect of laser parameters on ohmic contact and the annealing process on SiC diode devices is also reviewed. Progress of other substrate materials, namely 6H-SiC and semi-insulating 4H-SiC-based devices with laser annealed ohmic contacts, is also briefly discussed, in which formation of semi-insulating SiC ohmic contacts is derived from laser irradiation at the interface to produce 3C-SiC. Some experiment results have been shown in the passage, such as XRD, SEM, TEM, etc. In the review, it points out that the direction of application and development of the laser annealing process for improving the ohmic contact of SiC power devices is highly encouraging.

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Section: Research Direction and Progressmentioning

confidence: 99%

Fabrication of Ohmic Contact on N-Type SiC by Laser Annealed Process: A Review

Zou

et al. 2023

Crystals

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Contacts to wide band gap (WBG) and ultra-wide band gap (UWBG) semiconductors for power electronics devices

Roccaforte,

Vivona,

Greco

et al. 2024

Reference Module in Materials Science and Materials Engineering

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Influence of the absorption layer on the pulsed laser (355 nm) annealing thermal budget during formation of Ni-based ohmic contacts on 4H-SiC substrate

Ding

Kai-ming

et al. 2022

Journal of Applied Physics

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Laser annealing has attracted significant attention for ohmic contacts of the 4H-SiC substrate, especially Ni-based ohmic contact. In this study, a metallic capping layer (Ti, Nb, Mo, W, or Ag) was placed on the top of Ni as the absorption layer for a 355 nm laser, and the effect of the absorption layer on the laser annealing thermal budget was investigated. The temperature fields of the layer (30 nm)/Ni (70 nm)/4H-SiC (100 μm) contacts were simulated numerically using the finite element method. The results demonstrated that the thermal budget can be affected by the main properties of the layer, including the laser absorptivity, thermal conduction coefficient, specific heat capacity, and density. In thermal budget recipes, the energy density required for ohmic contact at each pulse width can be reduced when the product of the latter three parameters is low. However, the optical absorptivity of the layer is critical to reducing the thermal budget. Ti, which has high absorptivity, a small product, and a high melting point, is an excellent absorption layer for Ni-based ohmic contacts that connect to the 4H-SiC substrate.

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The Ohmic Contact of 4H-SiC Power Devices by Pulse Laser Annealing and Rapid Thermal Annealing

Cited by 4 publications

References 20 publications

Fabrication of Ohmic Contact on N-Type SiC by Laser Annealed Process: A Review

Fabrication of Ohmic Contact on N-Type SiC by Laser Annealed Process: A Review

Contacts to wide band gap (WBG) and ultra-wide band gap (UWBG) semiconductors for power electronics devices

Influence of the absorption layer on the pulsed laser (355 nm) annealing thermal budget during formation of Ni-based ohmic contacts on 4H-SiC substrate

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