Abstract:The present study demonstrates the nucleation and growth mechanism of the Tl 2 Ba 2 Ca 2 Cu 3 O 10 (Tl-2223) superconductor by the electrodeposition technique on low cost aluminum coated glass (ALCG)-substrate at low processing temperature and short synthesis time, which is one of the most important aspects demanded of superconducting materials in practical applications. Superconducting thin films of Tl-2223 have been fabricated by the electrodeposition process on crystalline ALCG-substrate for the first time.… Show more
“…Moreover, the surface morphology of amorphous carbon films demonstrates the island groove characteristic of the non‐reactive nucleation, characterized by field emission SEM images in Fig. . As the complex reaction happens at the liquid/solid interface, which is hard to observe through the experimental techniques, although XPS and FTIR analysis support the formation of some Si–O–C and Si–C bonds at the interface, amorphous carbon films still remain weakly adhesive.…”
“…Moreover, the surface morphology of amorphous carbon films demonstrates the island groove characteristic of the non‐reactive nucleation, characterized by field emission SEM images in Fig. . As the complex reaction happens at the liquid/solid interface, which is hard to observe through the experimental techniques, although XPS and FTIR analysis support the formation of some Si–O–C and Si–C bonds at the interface, amorphous carbon films still remain weakly adhesive.…”
“…It has been shown that depending on the rate of nucleation, the growth mechanisms are of two types, instantaneous nucleation and progressive nucleation [7]. In order to study the electrochemical nucleation and growth mechanisms of YBaCuO electrodeposition onto AAO, the currenttime transients are further analyzed by plotting the (I/I max ) 2 versus (t/t max ) for the instantaneous and progressive growth.…”
Section: Resultsmentioning
confidence: 99%
“…In order to study the electrochemical nucleation and growth mechanisms of YBaCuO electrodeposition onto AAO, the currenttime transients are further analyzed by plotting the (I/I max ) 2 versus (t/t max ) for the instantaneous and progressive growth. A theoretical plot for the Scharifker and Hills model [7] and the experimental plots of YBaCuO alloy deposition are shown in Fig. 1b.…”
In this work, the technological aspects of great importance YBa2Cu3O7−x superconducting materials were produced in the form of nanotube by electrochemical method. The electrochemical deposition conditions for the YBaCu deposition in nanoporous Al2O3 were investigated. The heat treatment was applied to YBaCu/Al2O3 nanopatterns, to form superconductive phase. The resulting nanostructures were found to be in length 45 µm, 177210 nm in diameter. The produced nanostructures at −4 V and more positive potentials were YBaCu nanowires, while the nanostructures deposited at the more negative potentials were of nanotube form.
“…High temperature superconducting (HTS) thin film is a kind of important material used in superconducting electronics applications, including high-frequency electronic devices and Josephson junction devices [1]. In the practical HTS thin films, Tl 2 Ba 2 CaCu 2 O 8 (Tl-2212) films are getting more and more attention on passive microwave devices due to their high critical temperature [2][3][4], high critical current density, low microwave surface resistance and strong anti-humidity [5][6][7][8].…”
Tl-2212 superconducting films were fabricated on r-cut sapphire substrates buffered with (00l)-oriented CeO2 films. The buffer layers were deposited by the cerium dioxide sputtering target and the RF magnetron sputtering method. The epitaxial growth of CeO2 films on r-cut sapphire substrates was obtained over a wide range of sputtering parameters, such as temperature, pressure, power and Ar/O2 ratio. The Tl-2212 films grown on these buffer layers subsequently were purely c-axis orientation. The critical transition temperature of the best film was 105.6 K, the critical current density was 2.8 MA/cm2 (77 K, 0 T) and the surface resistance was 435 μΩ (10 GHz, 77 K).
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