The Nonradiative Properties of Self‐Trapped Holes in Ultra‐Wide Bandgap Gallium Oxide Film
Isiaka Lukman,
Leah Bergman
Abstract:The photoluminescence (PL) of self‐trapped holes (STH) in ultra‐wide bandgap β‐Ga2O3 is commonly its most dominant light emission and is an inherent property. Thus, gaining knowledge of the crystal dynamics that impact the PL properties is vital to sensor and other technologies. The PL, Raman‐phonons, and their interactions are studied at an extreme temperature range of 77–622 K. The PL is studied up to the bandgap value of ≈5 eV. It is found that the high‐energy Raman modes provide a major route to the nonrad… Show more
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