The non-isothermal crystallization kinetics of Sb2S3 in the (GeS2)0.2(Sb2S3)0.8 glass

Relationship between Johnson–Mehl–Avrami and Šesták–Berggren models in the kinetics of crystallization in amorphous materials

“…Table 5 shows the p values obtained by the authors and the simulated SB model parameters m sim and n sim in this work. The comparison of Table 5 with Table 3 shows that the probable nucleation/growth mechanisms for Al 78 W 22 and Al 80 W 20 thin films are site saturation 2D and 3D respectively while the mechanism of Al 75 W 25 thin films might be between 1D and 2D.…”

“…(17) can be tested in the crystallization kinetics of glass components, polymer melts and other amorphous materials, as shown here [18][19][20][21][22][23][24][25].…”

Crystallization kinetics of overlapping phases in Se70Te15Sb15 using isoconversional methods

“…(8), the N values can be determined from the dependence [43] ln ½ϕ expðE c ðαÞ=RTÞ ¼ lnðΔHAÞþN ln ½α M=N ð1À αÞ:…”

“…Furthermore, the pre-exponential factor A can be calculated from the section of the dependence [44]. On the other hand, the Avrami exponent, n, and the pre-exponential factor, A, can be calculated according to the JMA model from the following equation [43]:…”

Influence of experimental conditions on enthalpy relaxation observed by cyclic measurement with constant heating rate

“…The stability of the glass during heating to the temperature above T g depends on the temperature of crystallization. The temperature range between T g and the beginning of the first crystallization (crystallization of Sb 2 S 3 ) measured by DSC at heating rate 20 K/min is 80°C for (GeS 2 ) 0.2 (Sb 2 S 3 ) 0.8 composition and 120°C for (GeS 2 ) 0.3 (Sb 2 S 3 ) 0.7 composition (the samples were in the form of bulk) [46,47]. So, compared to amorphous Se (a "model" system for chalcogenides with well-described enthalpy and volume relaxation and crystallization [14,[48][49][50]) where difference between T g and crystallization is only ca.…”