The noise-equivalent magnetic induction spectral density of magnetotransistors

Căruntu, George; Dragulinescu, M.

doi:10.1109/smicnd.2005.1558824

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The Detection Limit Of Sensors In Mos Technology2

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“…Figure 4 illustrates the cross section of a magnetotransistors operating on the current deflection principle [2]. If the very small magnetic field a E is oriented as shown in Fig.…”

Section: The Detection Limit Of Sensors In Mos Technologymentioning

confidence: 99%

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The noise of MOS magnetic microsensors structures

Panait

Căruntu

2008

2008 International Semiconductor Conference

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The paper presents the results of research work regarding the analysis and optimization of magnetic microsensor structures realized in MOS integrated circuits technology. By assimilating the MOSFET channel of almost constant depth with a Hall plate, the results obtained for the conventional Hall plates have been extended to MOS-Hall plates. On the basis of adequate models there have been established the noise main characteristics for bipolar lateral magnetotransistor, where the current deflection effect is dominating. An analysis of the devices characteristics in respect with the channel geometry and the material features has therefore been achieved for the first time.

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“…Figure 4 illustrates the cross section of a magnetotransistors operating on the current deflection principle [2]. If the very small magnetic field a E is oriented as shown in Fig.…”

Section: The Detection Limit Of Sensors In Mos Technologymentioning

confidence: 99%

“…The area from base region, between the emitter contact and collector contact, operates as a short Hall plate, and an induction field ⊥ B causes the deflection of current lines. The transverse Hall current will be [2]: …”

Section: The Detection Limit Of Sensors In Mos Technologymentioning

confidence: 99%