The Nitrogen Isoelectronic Trap in GaAs

Wolford, D. J.; Bradley, J. A.; Fry, K.; Thompson, J.V.

doi:10.1007/978-1-4615-7682-2_138

Cited by 51 publications

(61 citation statements)

References 8 publications

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“…The existence of such states has been predicted by theoretical calculations within the tight binding approximation framework, 28 and confirmed by experimental measurements under hydrostatic pressure. 29,30 As expected for a localized state, a much weaker pressure dependence of the N energy level was observed in GaAs compared to the conduction-band edge. The level was also found to move into the band gap when GaAs is alloyed with AlAs.…”

Section: Band Anticrossing Modelsupporting

confidence: 68%

Band anticrossing in dilute nitrides

Shan

Walukiewicz

et al. 2004

J. Phys.: Condens. Matter

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Alloying III-V compounds with small amounts of nitrogen leads to dramatic reduction of the fundamental band-gap energy in the resulting dilute nitride alloys. The effect originates from an anti-crossing interaction between the extended conduction-band states and localized N states.The interaction splits the conduction band into two nonparabolic subbands. The downward shift of the lower conduction subband edge is responsible for the N-induced reduction of the fundamental band-gap energy. The changes in the conduction band structure result in significant increase in electron effective mass and decrease in the electron mobility, and lead to a large enhance of the maximum doping level in GaInNAs doped with group VI donors. In addition, a striking asymmetry in the electrical activation of group IV and group VI donors can be attributed to mutual passivation process through formation of the nearest neighbor group-IV donor nitrogen pairs.

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Section: Band Anticrossing Modelsupporting

confidence: 68%

Band anticrossing in dilute nitrides

Shan

Walukiewicz

et al. 2004

J. Phys.: Condens. Matter

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show abstract

“…The existence of such states has been predicted by theoretical calculations within the tight binding approximation framework, 51 and confirmed by experimental measurements under hydrostatic pressure. 52,53 As expected for a localized state the energy level of N shows pressure dependence much weaker than that of the conduction band edge of GaAs. The level was also found to move into the band gap when GaAs is alloyed with AlAs.…”

Section: Band Anticrossingmentioning

confidence: 51%

New Developments in Dilute Nitride Semiconductor Research

Shan¹,

Walukiewicz²,

Yu³

et al. 2006

III-Nitride Semiconductor Materials

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“…For GaN x As 1-x , the downward shift of the lower subband E -can account well for the reduction of the fundamental band gap using a value of E N =1.65 eV above the valence band maximum derived from photoluminescence (PL) measurements in N-doped GaAs [16] and C NM =2.7 eV from fitting data on the variation ) 1 (…”

Section: Introductionmentioning

confidence: 92%

Synthesis of GaNxAs1−x thin films by pulsed laser melting and rapid thermal annealing of N+-implanted GaAs

Walukiewicz

Scarpulla

et al. 2003

Journal of Applied Physics

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We present a systematic investigation on the formation of the highly mismatched alloy GaN x As 1-x using N + -implantation followed by a combination of pulsed laser melting and rapid thermal annealing. Thin films of GaN x As 1-x with x as high as 0.016 and an activation efficiency of the implanted N up to 50% have been synthesized with structural and optical properties comparable to films grown by epitaxial deposition techniques with similar substitutional N content. The effects of N + implantation dose, laser energy fluence and rapid thermal annealing temperature on the N incorporation as well as optical and structural properties of the GaN x As 1-x films are discussed.

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The Nitrogen Isoelectronic Trap in GaAs

Cited by 51 publications

References 8 publications

Band anticrossing in dilute nitrides

Band anticrossing in dilute nitrides

New Developments in Dilute Nitride Semiconductor Research

Synthesis of GaNxAs1−x thin films by pulsed laser melting and rapid thermal annealing of N+-implanted GaAs

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