The next generation intigrated MEMS and CMOS process on SOI wafers for overdamped accelerometers

Chen, T.D.; Kelly, Tony; Collins, D.; Berthold, B.; Brosnihan, Tim; Denison, Timothy; Kuang, J.; Okane, Masahiro; Weigold, J.W.; Bain, D.

doi:10.1109/sensor.2005.1497273

Cited by 21 publications

(17 citation statements)

References 7 publications

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“…Originally demonstrated at UC Berkeley, Analog Devices' has commercialized a pre-CMOS MEMS technology based on SOI substrates (SOIMEMS) as a next generation process for the monolithic integration of inertial sensors [18,22]. Compared to Analog Devices' previous iMEMS technology (see also next Section), the SOIMEMS technology offers thicker structural layers and a more advanced IC technology, enabling more on-chip functionality.…”

Section: Pre-cmos Micromachiningmentioning

confidence: 99%

CMOS-Based Microsensors

Brand

Seo

2006

ECS Trans.

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Section: Pre-cmos Micromachiningmentioning

confidence: 99%

CMOS-Based Microsensors

Brand

Seo

2006

ECS Trans.

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“…Accelerometers based on bulk micromachining, especially on siliconon-insulator (SOI) wafers, have been widely developed (Brosnihan et al 1997;Chen et al 2005;Xie et al 2011;Dong et al 2005). The use of SOI wafers in implementing capacitive accelerometers has various advantages such as superior material properties of a single crystal material, easily achieved high-aspect-ratio microstructures, good mechanical stability, less residual stress and simple fabrication processes.…”

Section: Introductionmentioning

confidence: 99%

A three-axis SOI accelerometer sensing with both in-plane and vertical comb electrodes

et al. 2011

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A three-axis capacitive accelerometer based on silicon-on-insulator is designed and fabricated. In the accelerometer, totally eight groups of capacitors are compactly arranged around an octagonal proof mass. The four groups of capacitors along orthogonal direction with in-plane comb electrodes detect XY acceleration, while the other four groups of capacitors along diagonal direction with vertical comb electrodes detect Z acceleration. Measurements of in-plane and vertical motion by the respective in-plane and vertical comb electrodes enable direct detection for all the three axes with differential capacitive sensing scheme. For the fabricated accelerometer in the size of 4 9 4 mm 2 , the capacitance sensitivities of in-plane and outof-plane accelerometers are 145.3 and 9.1 fF/g, respectively.

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“…Capacitive accelerometers which detect high accelerations of more than 50 G are widely used in order to detect crash incidents and so on [1][2][3]. In these applications, the desired frequency range of the sensor is from DC to around 1 kHz.…”

Section: Introductionmentioning

confidence: 99%

“…When the output is saturated, the low-pass filter cannot eliminate high-frequency components, resulting in a measurement error. In order to solve this clipping problem, an accelerometer that can avoid electrode contact by suppressing the mechanical response is needed [2,3].…”

Section: Introductionmentioning

confidence: 99%

A new z-axis capacitive accelerometer with high impact durability

Hirata

Konno

Tokunaga

et al. 2009

TRANSDUCERS 2009 - 2009 International Solid-State Sensors, Actuators and Microsystems Conference

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This paper reports a newly developed z-axis capacitive accelerometer with high durability to impacts. Our accelerometer has a unique sensing mechanism by which the displacement of an inertial mass caused by an acceleration in the z-axis direction is converted into the rotational displacement of a pair of detection plates. Our accelerometer has a high degree of design freedom in terms of selecting the resonant frequency and sensitivity. While maintaining a constant sensitivity, the resonance frequency and etching hole within the detection plate were designed so as to have an appropriate damping effect. As a result, it achieved an output saturation level higher than 5000 G under the impact acceleration of 5 kHz.

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The next generation intigrated MEMS and CMOS process on SOI wafers for overdamped accelerometers

Cited by 21 publications

References 7 publications

CMOS-Based Microsensors

CMOS-Based Microsensors

A three-axis SOI accelerometer sensing with both in-plane and vertical comb electrodes

A new z-axis capacitive accelerometer with high impact durability

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